发明授权
- 专利标题： Non-volatile semiconductor memory device having ion conductive layer and methods of fabricating and operating the same
- 专利标题（中）： 具有离子传导层的非易失性半导体存储器件及其制造和操作方法
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申请号： US11508991申请日： 2006-08-24
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公开(公告)号： US08193569B2公开(公告)日： 2012-06-05
- 发明人: Jung-hyun Lee
- 申请人： Jung-hyun Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2005-0078038 20050824
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A non-volatile semiconductor memory device having an ion conductive layer, and methods of fabricating and operating the same are disclosed. The non-volatile memory device may include a substrate, a switching element formed in the substrate, and a storage node connected to the switching element, the storage node may include a lower electrode connected to the switching element, and used as an ion source; a data storage layer formed on the lower electrode, a portion thereof being spaced from the lower electrode; a side electrode spaced from the lower electrode, a side surface thereof being connected to a portion of the data storage layer spaced from the lower electrode; and an upper electrode formed on the data storage layer, or may include a lower electrode connected to the switching element, and used as an ion source; and a data storage layer formed on the lower electrode; an upper electrode formed on the data storage layer.
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