Invention Grant
- Patent Title: High performance InAs-based devices
- Patent Title (中): 高性能基于InAs的设备
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Application No.: US11641917Application Date: 2006-12-19
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Publication No.: US08193611B1Publication Date: 2012-06-05
- Inventor: Rajesh Rajavel , Ken Elliott , David Chow
- Applicant: Rajesh Rajavel , Ken Elliott , David Chow
- Applicant Address: US CA Malibu
- Assignee: HRL Laboratories, LLC
- Current Assignee: HRL Laboratories, LLC
- Current Assignee Address: US CA Malibu
- Agency: Ladas & Parry
- Main IPC: H01L29/22
- IPC: H01L29/22
Abstract:
Material layer structures that have high mobility, a high conduction band barrier and materials that can be implanted to enable higher performance FET device. The structures contain a quantum well layer disposed between two barriers and disposed above a buffer layer and a substrate.
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