Invention Grant
- Patent Title: Transmitting radio frequency signal in semiconductor structure
- Patent Title (中): 在半导体结构中发射射频信号
-
Application No.: US12023184Application Date: 2008-01-31
-
Publication No.: US08193880B2Publication Date: 2012-06-05
- Inventor: Shu-Ying Cho , Tzu-Jin Yeh , Sally Liu
- Applicant: Shu-Ying Cho , Tzu-Jin Yeh , Sally Liu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H03H7/38
- IPC: H03H7/38 ; H01P3/08

Abstract:
A semiconductor device for transmitting a radio frequency signal along a signal line includes a signal line that extends along a principal axis. On one side of the signal line is a first dielectric, and on the opposite side of the signal line is a second dielectric. First and second ground lines are proximate to the first and second dielectrics, respectively, and the ground lines are approximately parallel to the signal line. The device has a transverse cross-section that varies along the principal axis.
Public/Granted literature
- US20090195327A1 TRANSMITTING RADIO FREQUENCY SIGNAL IN SEMICONDUCTOR STRUCTURE Public/Granted day:2009-08-06
Information query