A non-volatile memory device using a variable resistive element includes a memory cell array having a plurality of non-volatile memory cells, a first voltage generator generating a first voltage, a voltage pad receiving an external voltage that has a level higher than the first voltage, a sense amplifier supplied with the first voltage and reading data from the non-volatile memory cells selected from the memory cell array, and a write driver supplied with the external voltage and writing data to the non-volatile memory cells selected from the memory cell array.