公开(公告)号：US20120224437A1

公开(公告)日：2012-09-06

申请号：US13470617

申请日：2012-05-14

Applicant: Hye-Jin Kim ,  Kwang-Jin Lee ,  Du-Eung Kim ,  Hung-Jun An

Inventor： Hye-Jin Kim ,  Kwang-Jin Lee ,  Du-Eung Kim ,  Hung-Jun An

IPC: G11C5/14

CPC classification number: G11C5/14 ,  G11C7/1078 ,  G11C7/1096 ,  G11C8/10 ,  G11C11/22 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0023 ,  G11C13/0038 ,  G11C13/0069 ,  G11C2013/0088 ,  G11C2013/009 ,  G11C2213/72

Abstract: A non-volatile memory device using a variable resistive element is provided. The non-volatile memory device includes a memory cell array having a plurality of non-volatile memory cells, a first voltage generator configured to generate a first voltage, a voltage pad configured to receive an external voltage that has a level higher than the first voltage, a write driver configured to be supplied with the external voltage and configured to write data to the plurality of non-volatile memory cells selected from the memory cell array; a sense amplifier configured to be supplied with the external voltage and configured to read data from the plurality of non-volatile memory cells selected from the memory cell array, and a row decoder and a column decoder configured to select the plurality of non-volatile memory cells included in the memory cell array, the row decoder being supplied with the first voltage and the column decoder being supplied with the external voltage.

Abstract translation: 提供了使用可变电阻元件的非易失性存储器件。 非易失性存储器件包括具有多个非易失性存储器单元的存储单元阵列，被配置为产生第一电压的第一电压发生器，被配置为接收具有高于第一电压的电平的外部电压的电压焊盘 写入驱动器，被配置为被提供有所述外部电压并被配置为向从所述存储单元阵列中选择的所述多个非易失性存储器单元写入数据; 感测放大器，被配置为被提供有外部电压并且被配置为从从存储单元阵列中选择的多个非易失性存储器单元读取数据;行解码器和列解码器，被配置为选择多个非易失性存储器 包括在存储单元阵列中的单元，行解码器被提供有第一电压，并且列解码器被提供有外部电压。

公开(公告)号：US20090154221A1

公开(公告)日：2009-06-18

申请号：US12314513

申请日：2008-12-11

Applicant: Hye-Jin Kim ,  Kwang-Jin Lee ,  Du-Eung Kim ,  Hung-Jun An

Inventor： Hye-Jin Kim ,  Kwang-Jin Lee ,  Du-Eung Kim ,  Hung-Jun An

IPC: G11C11/00 ,  G11C7/00 ,  G11C5/14

CPC classification number: G11C7/1078 ,  G11C5/14 ,  G11C7/1096 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0038 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/72

Abstract: A non-volatile memory device using a variable resistive element is provided. The non-volatile memory device includes a memory cell array having a plurality of non-volatile memory cells, a first voltage generator generating a first voltage, a voltage pad receiving an external voltage that has a level higher than the first voltage, a sense amplifier supplied with the first voltage and reading data from the non-volatile memory cells selected from the memory cell array, and a write driver supplied with the external voltage and writing data to the non-volatile memory cells selected from the memory cell array.

Abstract translation: 提供了使用可变电阻元件的非易失性存储器件。 非易失性存储器件包括具有多个非易失性存储器单元的存储单元阵列，产生第一电压的第一电压发生器，接收高于第一电压的电平的外部电压的电压焊盘，读出放大器 提供第一电压并从存储单元阵列中选择的非易失性存储单元读取数据，以及提供有外部电压的写入驱动器，并将数据写入从存储单元阵列中选择的非易失性存储单元。

公开(公告)号：US08964488B2

公开(公告)日：2015-02-24

申请号：US13470617

申请日：2012-05-14

Applicant: Hye-Jin Kim ,  Kwang-Jin Lee ,  Du-Eung Kim ,  Hung-Jun An

Inventor： Hye-Jin Kim ,  Kwang-Jin Lee ,  Du-Eung Kim ,  Hung-Jun An

IPC: G11C5/14 ,  G11C7/10 ,  G11C11/22 ,  G11C13/00 ,  G11C8/10

CPC classification number: G11C5/14 ,  G11C7/1078 ,  G11C7/1096 ,  G11C8/10 ,  G11C11/22 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0023 ,  G11C13/0038 ,  G11C13/0069 ,  G11C2013/0088 ,  G11C2013/009 ,  G11C2213/72

Abstract: A non-volatile memory device using a variable resistive element is provided. The non-volatile memory device includes a memory cell array having a plurality of non-volatile memory cells, a first voltage generator configured to generate a first voltage, a voltage pad configured to receive an external voltage that has a level higher than the first voltage, a write driver configured to be supplied with the external voltage and configured to write data to the plurality of non-volatile memory cells selected from the memory cell array; a sense amplifier configured to be supplied with the external voltage and configured to read data from the plurality of non-volatile memory cells selected from the memory cell array, and a row decoder and a column decoder configured to select the plurality of non-volatile memory cells included in the memory cell array, the row decoder being supplied with the first voltage and the column decoder being supplied with the external voltage.

Abstract translation: 提供了使用可变电阻元件的非易失性存储器件。 非易失性存储器件包括具有多个非易失性存储器单元的存储单元阵列，被配置为产生第一电压的第一电压发生器，被配置为接收具有高于第一电压的电平的外部电压的电压焊盘 写入驱动器，被配置为被提供有所述外部电压并被配置为向从所述存储单元阵列中选择的所述多个非易失性存储器单元写入数据; 感测放大器，被配置为被提供有外部电压并且被配置为从从存储单元阵列中选择的多个非易失性存储器单元读取数据;行解码器和列解码器，被配置为选择多个非易失性存储器 包括在存储单元阵列中的单元，行解码器被提供有第一电压，并且列解码器被提供有外部电压。

公开(公告)号：US08194447B2

公开(公告)日：2012-06-05

申请号：US12314513

申请日：2008-12-11

Applicant: Hye-Jin Kim ,  Kwang-Jin Lee ,  Du-Eung Kim ,  Hung-Jun An

Inventor： Hye-Jin Kim ,  Kwang-Jin Lee ,  Du-Eung Kim ,  Hung-Jun An

IPC: G11C16/04

CPC classification number: G11C7/1078 ,  G11C5/14 ,  G11C7/1096 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0038 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/72

Abstract: A non-volatile memory device using a variable resistive element includes a memory cell array having a plurality of non-volatile memory cells, a first voltage generator generating a first voltage, a voltage pad receiving an external voltage that has a level higher than the first voltage, a sense amplifier supplied with the first voltage and reading data from the non-volatile memory cells selected from the memory cell array, and a write driver supplied with the external voltage and writing data to the non-volatile memory cells selected from the memory cell array.

Abstract translation: 使用可变电阻元件的非易失性存储器件包括具有多个非易失性存储器单元的存储单元阵列，产生第一电压的第一电压发生器，接收高于第一电压的电平的外部电压的电压焊盘 电压，提供有第一电压的读出放大器和从存储单元阵列中选择的非易失性存储器单元读取数据，以及提供有外部电压的写入驱动器，并将数据写入从存储器中选择的非易失性存储器单元 单元格阵列。