发明授权
US08194469B2 Optical sensor element, imaging device, electronic equipment and memory element
有权
光学传感器元件，成像设备，电子设备和存储元件
- 专利标题： Optical sensor element, imaging device, electronic equipment and memory element
- 专利标题（中）： 光学传感器元件，成像设备，电子设备和存储元件
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申请号： US12361049申请日： 2009-01-28
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公开(公告)号： US08194469B2公开(公告)日： 2012-06-05
- 发明人: Tsutomu Tanaka , Dharam Pal Gosain
- 申请人： Tsutomu Tanaka , Dharam Pal Gosain
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： K&L Gates LLP
- 优先权： JP2008-020558 20080131
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
An optical sensor element has a gate electrode opposed to a semiconductor layer made of an oxide semiconductor via a gate insulating film, source and drain electrodes being connected to the semiconductor layer, wherein the amount of light received by the semiconductor layer is read out as a drain current which changes in a non-volatile manner relative to a gate voltage.
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