Invention Grant
US08196546B1 Semiconductor structure made using improved multiple ion implantation process
有权
使用改进的多离子注入工艺制造的半导体结构
- Patent Title: Semiconductor structure made using improved multiple ion implantation process
- Patent Title (中): 使用改进的多离子注入工艺制造的半导体结构
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Application No.: US12950376Application Date: 2010-11-19
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Publication No.: US08196546B1Publication Date: 2012-06-12
- Inventor: Sarko Cherekdjian
- Applicant: Sarko Cherekdjian
- Applicant Address: US NY Corning
- Assignee: Corning Incorporated
- Current Assignee: Corning Incorporated
- Current Assignee Address: US NY Corning
- Agent Bruce P. Watson
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Methods and apparatus provide for: a first source of plasma, wherein the plasma includes a first species of ions; a second source of plasma, wherein the plasma includes a second species of ions; selection of the plasma from the first and second sources; and acceleration the first species of ions or the second species of ions toward a semiconductor wafer.
Public/Granted literature
- US20120129324A1 SEMICONDUCTOR STRUCTURE MADE USING IMPROVED MULTIPLE ION IMPLANTATION PROCESS Public/Granted day:2012-05-24
Information query
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