发明授权
US08198110B2 Method of making a TFT array with photo-imageable insulating layer over address lines
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通过地址线制造具有可光刻绝缘层的TFT阵列的方法
- 专利标题: Method of making a TFT array with photo-imageable insulating layer over address lines
- 专利标题(中): 通过地址线制造具有可光刻绝缘层的TFT阵列的方法
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申请号: US12285780申请日: 2008-10-14
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公开(公告)号: US08198110B2公开(公告)日: 2012-06-12
- 发明人: Willem Den Boer , John Z. Z. Zhong , Tieer Gu
- 申请人: Willem Den Boer , John Z. Z. Zhong , Tieer Gu
- 申请人地址: KR Seoul
- 专利权人: LG Display Co., Ltd.
- 当前专利权人: LG Display Co., Ltd.
- 当前专利权人地址: KR Seoul
- 代理机构: McKenna, Long and Aldridge, LLP
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
This invention is related to a thin film transistor (TFT) array and method of making same, for use in an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The TFT array and corresponding display are made by forming the TFTs and corresponding address lines on a substrate, coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing pixel electrodes on the substrate over the insulating layer so that the pixel electrodes contact respective TFT source electrodes through the contact vias. The resulting display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines.
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