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29 条记录 (耗时 0.015 秒)

    Method of making a TFT array with photo-imageable insulating layer over address lines
    1.
    发明授权
    Method of making a TFT array with photo-imageable insulating layer over address lines 失效
    通过地址线制造具有可光刻绝缘层的TFT阵列的方法

    公开(公告)号：US08198110B2

    公开(公告)日：2012-06-12

    申请号：US12285780

    申请日：2008-10-14

    申请人： Willem Den Boer ,  John Z. Z. Zhong ,  Tieer Gu

    发明人： Willem Den Boer ,  John Z. Z. Zhong ,  Tieer Gu

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14603 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13606 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/14676 ,  H01L29/66765 ,  H01L29/78636

    摘要： This invention is related to a thin film transistor (TFT) array and method of making same, for use in an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The TFT array and corresponding display are made by forming the TFTs and corresponding address lines on a substrate, coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing pixel electrodes on the substrate over the insulating layer so that the pixel electrodes contact respective TFT source electrodes through the contact vias. The resulting display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines.

    摘要翻译： 本发明涉及薄膜晶体管（TFT）阵列及其制造方法，用于具有高像素孔径比的有源矩阵液晶显示器（AMLCD）。 通过在基板上形成TFT和相应的地址线，形成TFT阵列和相应的显示器，用作为负光刻胶的可光致抗蚀剂的绝缘层涂覆地址线和TFT，用紫外光曝光绝缘层的部分 保留在基板上，去除绝缘层的未曝光区域，以便形成接触孔，并且在绝缘层上的衬底上沉积像素电极，使得像素电极通过接触通孔接触相应的TFT源电极。 所得到的显示器具有增加的像素孔径比，因为像素电极形成在绝缘层上，以便与阵列地址线的部分重叠。

    Method of making a TFT array with photo-imageable insulating layer over address lines
    3.
    发明授权
    Method of making a TFT array with photo-imageable insulating layer over address lines 失效
    通过地址线制造具有可光刻绝缘层的TFT阵列的方法

    公开(公告)号：US06372534B1

    公开(公告)日：2002-04-16

    申请号：US08630984

    申请日：1996-04-12

    申请人： Willem den Boer ,  John Z. Z. Zhong ,  Tieer Gu

    发明人： Willem den Boer ,  John Z. Z. Zhong ,  Tieer Gu

    IPC分类号： H01L2100

    CPC分类号： H01L27/14603 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13606 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/14676 ,  H01L29/66765 ,  H01L29/78636

    摘要： This invention is related to a thin film transistor (TFT) array and method of making same, for use in an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The TFT array and corresponding display are made by forming the TFTs and corresponding address lines on a substrate, coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing pixel electrodes on the substrate over the insulating layer so that the pixel electrodes contact respective TFT source electrodes through the contact vias. The resulting display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines.

    摘要翻译： 本发明涉及薄膜晶体管（TFT）阵列及其制造方法，用于具有高像素孔径比的有源矩阵液晶显示器（AMLCD）。 通过在基板上形成TFT和相应的地址线，形成TFT阵列和相应的显示器，用作为负光刻胶的可光致抗蚀剂的绝缘层涂覆地址线和TFT，用紫外光曝光绝缘层的部分 保留在基板上，去除绝缘层的未曝光区域，以便形成接触孔，并且在绝缘层上的衬底上沉积像素电极，使得像素电极通过接触通孔接触相应的TFT源电极。 所得到的显示器具有增加的像素孔径比，因为像素电极形成在绝缘层上，以便与阵列地址线的部分重叠。

    Liquid crystal display with SiO.sub.x N.sub.y inclusive multilayer black matrix
    5.
    发明授权
    Liquid crystal display with SiO.sub.x N.sub.y inclusive multilayer black matrix 失效
    含SiOxNy的多层黑色矩阵的液晶显示

    公开(公告)号：US6157426A

    公开(公告)日：2000-12-05

    申请号：US23451

    申请日：1998-02-13

    申请人： Tieer Gu

    发明人： Tieer Gu

    IPC分类号： G02F1/1335 ,  G02F1/1333

    CPC分类号： G02F1/133512 ,  G02F1/133502

    摘要： A liquid crystal display (LCD) includes a multilayer black matrix system for improving the contrast of displayed images. The black matrix system includes at least one layer of a material that has variable amounts of chemical elements. By, for example, varying "x" and "y" in SiO.sub.x N.sub.y, the refractive index "n" of adjacent SiO.sub.x N.sub.y layers can be slowly varied through the thickness of the system so that the refractive index adjacent the substrate substantially matches that of the substrate and so that there are no overly large refractive index differences between adjacent layers in the system. This reduces light reflections off of the black matrix system.

    摘要翻译： 液晶显示器（LCD）包括用于改善显示图像的对比度的多层黑矩阵系统。 黑矩阵系统包括至少一层具有可变量的化学元素的材料层。 例如，通过在SiO x N y中改变“x”和“y”，相邻的SiO x N y层的折射率“n”可以通过系统的厚度缓慢变化，使得与衬底相邻的折射率基本上与衬底的折射率相匹配 并且使得系统中相邻层之间的折射率差异不大。 这减少了黑矩阵系统的光反射。

    X-ray imager or LCD with bus lines overlapped by pixel electrodes and dual insulating layers therebetween
    6.
    发明授权
    X-ray imager or LCD with bus lines overlapped by pixel electrodes and dual insulating layers therebetween 失效
    具有由像素电极重叠的总线线路的X射线成像器或LCD

    公开(公告)号：US6011274A

    公开(公告)日：2000-01-04

    申请号：US954471

    申请日：1997-10-20

    申请人： Tieer Gu ,  Willem den Boer

    发明人： Tieer Gu ,  Willem den Boer

    IPC分类号： G02F1/1362 ,  G02F1/1368 ,  H01L27/146 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

    CPC分类号： H01L27/14676 ,  G02F1/1368 ,  G02F1/136213 ,  G02F2201/40

    摘要： This invention is related to an active matrix liquid crystal display (AMLCD) or an X-ray imaging device having a high aperture ratio. The imager or display has an increased aperture ratio because electrodes are formed over dual insulating layers so as to overlap portions of the array address lines and/or TFTs. Both the manufacturability and capacitive crosstalk of the device are improved due to the use of a photo-imageable organic insulating layer between the pixel electrodes and the address lines. An intermediate inorganic insulating layer is provided between the photo-imageable organic insulating layer and the overlapped TFTs in order to prevent the organic insulating layer from directly contacting semiconductor material in the TFTs thereby reducing potential voltage swings.

    摘要翻译： 本发明涉及一种有源矩阵液晶显示器（AMLCD）或具有高开口率的X射线成像装置。 成像器或显示器具有增加的孔径比，因为电极形成在双重绝缘层上，以便与阵列地址线和/或TFT的部分重叠。 由于在像素电极和地址线之间使用可光致成像的有机绝缘层，因此改善了器件的可制造性和电容串扰。 为了防止有机绝缘层与TFT中的半导体材料直接接触，可以在可光致成像的有机绝缘层和重叠的TFT之间设置中间无机绝缘层，从而减小电压摆幅。

    LCD with increased pixel opening sizes
    8.
    发明授权
    LCD with increased pixel opening sizes 失效
    LCD具有增加的像素开口尺寸

    公开(公告)号：US06870188B2

    公开(公告)日：2005-03-22

    申请号：US10052767

    申请日：2002-01-23

    申请人： Tieer Gu ,  Willem den Boer

    发明人： Tieer Gu ,  Willem den Boer

    IPC分类号： G02F1/1343 ,  G02F1/1333 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/146 ,  H01L29/04 ,  H01L29/786

    CPC分类号： H01L27/14603 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13606 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/14676 ,  H01L29/66765 ,  H01L29/78636

    摘要： A liquid crystal display having an increased pixel aperture ratio is disclosed along with a method of making same. An array of a-Si TFTs is deposited on a transparent substrate. Subsequently, an organic insulating layer (e.g. Benzocyclobutene) and a corresponding array of pixel electrodes are deposited over the TFT array so that the pixel electrodes overlap the display address lines thereby increasing the display's pixel aperture ratio. The low dielectric constant ∈ (e.g. about 2.7) and relatively high thickness (e.g. greater than about 1.5 μm) of the insulating layer reduce the pixel electrode-address line parasitic capacitance CPL in the overlap areas thereby reducing cross-talk (or capacitive coupling) in the display. In sum, an increased pixel aperture ratio is achieved without sacrificing display performance.

    摘要翻译： 公开了具有增加的像素孔径比的液晶显示器及其制造方法。 a-Si TFT阵列沉积在透明衬底上。 随后，在TFT阵列上沉积有机绝缘层（例如苯并环丁烯）和相应的像素电极阵列，使得像素电极与显示地址线重叠，从而增加显示器的像素孔径比。 绝缘层的低介电常数ε（例如约2.7）和相对高的厚度（例如大于约1.5μm）减小了重叠区域中的像素电极 - 地址线寄生电容CPL，从而减少串扰（或电容耦合） 在显示中。 总之，在不牺牲显示性能的情况下实现增加的像素孔径比。

    Image sensor or LCD including switching pin diodes
    10.
    发明授权
    Image sensor or LCD including switching pin diodes 失效
    图像传感器或LCD，包括开关二极管

    公开(公告)号：US06229192B1

    公开(公告)日：2001-05-08

    申请号：US09014380

    申请日：1998-01-27

    申请人： Tieer Gu

    发明人： Tieer Gu

    IPC分类号： H01L31075

    CPC分类号： H01L27/14676 ,  G02F1/1365

    摘要： A method of manufacturing a PIN (positive-intrinsic-negative) diode structure includes depositing an insulation or dielectric layer over the bottom PIN diode electrodes, prior to depositing the PIN semiconductor layers. The insulation layer results in a PIN diode structure with reduced leakage current, reduced RIE (reactive ion etching) chamber contamination, the reduction or elimination of post RIE processing, improved yields, and/or expands the potential materials that may be used for the bottom electrode. A corresponding PIN diode structure is also disclosed. The resulting PIN diode structures may be used in, for example, LCD (liquid crystal display) and solid state imager applications.

    摘要翻译： PIN（正 - 本征 - 负极）二极管结构的制造方法包括在沉积PIN半导体层之前在底部PIN二极管电极上沉积绝缘或电介质层。 绝缘层导致PIN二极管结构，泄漏电流降低，RIE（反应离子蚀刻）室污染减少，RIE处理后的减少或消除，提高的产量和/或扩展可能用于底部的潜在材料 电极。 还公开了相应的PIN二极管结构。 所得的PIN二极管结构可用于例如LCD（液晶显示器）和固态成像器应用。