发明授权
US08198191B2 Method of preparing low resistance metal line, patterned metal line structure, and display device using the same
有权
制备低电阻金属线，图案化金属线结构的方法和使用其的显示装置
- 专利标题： Method of preparing low resistance metal line, patterned metal line structure, and display device using the same
- 专利标题（中）： 制备低电阻金属线，图案化金属线结构的方法和使用其的显示装置
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申请号： US12843422申请日： 2010-07-26
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公开(公告)号： US08198191B2公开(公告)日： 2012-06-12
- 发明人: Sung Hen Cho , Ki Yong Song , Sang Eun Park
- 申请人： Sung Hen Cho , Ki Yong Song , Sang Eun Park
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Cantor Colburn LLP
- 优先权： KR10-2007-0040887 20070426
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
Disclosed herein is a method of preparing a low resistance metal line, in which a wet plating technique is used instead of a vacuum film forming process in order to simplify the process and decrease the manufacturing cost. In addition, a self-assembled monolayer is formed that facilitates the increased adsorption density and strength of the metal catalyst resulting in the formation of a high-density metal catalyst layer, thereby obtaining a high-quality metal line. Also disclosed herein, are a patterned metal line structure, and a display device using the same.
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