发明授权
US08202750B2 Method of manufacturing semiconductor device, semiconductor laser, optical pickup, and optical disk device with nitride type group III-V compound semiconductor layer
有权
具有氮化物型III-V族化合物半导体层的半导体器件，半导体激光器，光学拾取器和光盘器件的制造方法
- 专利标题： Method of manufacturing semiconductor device, semiconductor laser, optical pickup, and optical disk device with nitride type group III-V compound semiconductor layer
- 专利标题（中）： 具有氮化物型III-V族化合物半导体层的半导体器件，半导体激光器，光学拾取器和光盘器件的制造方法
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申请号： US12038329申请日： 2008-02-27
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公开(公告)号： US08202750B2公开(公告)日： 2012-06-19
- 发明人: Masaru Kuramoto , Eiji Nakayama , Yoshitsugu Ohizumi
- 申请人： Masaru Kuramoto , Eiji Nakayama , Yoshitsugu Ohizumi
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： SNR Denton US LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga, the method includes the steps of: forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate.
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