Invention Grant
- Patent Title: RF power delivery system in a semiconductor apparatus
- Patent Title (中): RF功率输送系统在半导体装置中
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Application No.: US12146189Application Date: 2008-06-25
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Publication No.: US08206552B2Publication Date: 2012-06-26
- Inventor: Zhigang Chen , Shahid Rauf , Kartik Ramaswamy
- Applicant: Zhigang Chen , Shahid Rauf , Kartik Ramaswamy
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: C23F1/00
- IPC: C23F1/00 ; H01L21/306 ; C23C16/00

Abstract:
Embodiments of the invention provide an apparatus which provide good RF uniformity within a processing chamber. In one embodiment, an apparatus includes a substrate support assembly, a terminal, and a dielectric insulator. The substrate support assembly has a center passage formed along a center axis. An RF transmission line is provided. The RF transmission line has a substantially vertical portion and a substantially horizontal portion, wherein the terminal is coupled to the substantially horizontal portion of the RF transmission line. The dielectric insulator circumscribes the substantially horizontal portion of the RF transmission line. The dielectric insulator has a first opening through which the terminal passes.
Public/Granted literature
- US20090321019A1 RF POWER DELIVERY SYSTEM IN A SEMICONDUCTOR APPARATUS Public/Granted day:2009-12-31
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