Invention Grant
US08208299B2 Integrated circuit embedded with non-volatile programmable memory having variable coupling and separate read/write paths
有权
嵌入非易失性可编程存储器的集成电路,具有可变耦合和分离的读/写路径
- Patent Title: Integrated circuit embedded with non-volatile programmable memory having variable coupling and separate read/write paths
- Patent Title (中): 嵌入非易失性可编程存储器的集成电路,具有可变耦合和分离的读/写路径
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Application No.: US12869378Application Date: 2010-08-26
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Publication No.: US08208299B2Publication Date: 2012-06-26
- Inventor: David Liu , John Nicholas Gross
- Applicant: David Liu , John Nicholas Gross
- Applicant Address: US CA San Jose
- Assignee: Invensas Corporation
- Current Assignee: Invensas Corporation
- Current Assignee Address: US CA San Jose
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: G11C16/00
- IPC: G11C16/00

Abstract:
A multi-programmable non-volatile device is operated with a floating gate that functions as a FET gate that overlaps a portion of a source/drain region and allows for variable coupling through geometry and/or biasing conditions. This allows a programming voltage for the device to be imparted to the floating gate through variable capacitive coupling, thus changing the state of the device. Different source/drain regions can be used for program and read operations. The invention can be used in environments such as data encryption, reference trimming, manufacturing ID, security ID, and many other applications.
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