Invention Grant
US08208304B2 Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
有权
在N位/单元模拟存储单元器件中以M位/单元密度存储，M> N
- Patent Title: Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
- Patent Title (中): 在N位/单元模拟存储单元器件中以M位/单元密度存储，M> N
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Application No.: US12618732Application Date: 2009-11-15
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Publication No.: US08208304B2Publication Date: 2012-06-26
- Inventor: Ofir Shalvi , Naftali Sommer , Uri Perlmutter , Dotan Sokolov
- Applicant: Ofir Shalvi , Naftali Sommer , Uri Perlmutter , Dotan Sokolov
- Applicant Address: IL Herzliya Pituach
- Assignee: Anobit Technologies Ltd.
- Current Assignee: Anobit Technologies Ltd.
- Current Assignee Address: IL Herzliya Pituach
- Agency: D. Kligler IP Services Ltd
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set.
Public/Granted literature
- US20100124088A1 STORAGE AT M BITS/CELL DENSITY IN N BITS/CELL ANALOG MEMORY CELL DEVICES, M>N Public/Granted day:2010-05-20
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