发明授权
US08209504B2 Nonvolatile memory device, nonvolatile memory system, and access device having a variable read and write access rate
有权
非易失性存储器件，非易失性存储器系统和具有可变读取和写入访问速率的访问设备
- 专利标题： Nonvolatile memory device, nonvolatile memory system, and access device having a variable read and write access rate
- 专利标题（中）： 非易失性存储器件，非易失性存储器系统和具有可变读取和写入访问速率的访问设备
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申请号： US12523756申请日： 2008-01-25
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公开(公告)号： US08209504B2公开(公告)日： 2012-06-26
- 发明人: Masahiro Nakanishi , Isao Kato , Masayuki Toyama , Tatsuya Adachi , Hirofumi Nakagaki , Takuji Maeda
- 申请人： Masahiro Nakanishi , Isao Kato , Masayuki Toyama , Tatsuya Adachi , Hirofumi Nakagaki , Takuji Maeda
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： Renner, Otto, Boisselle & Sklar, LLP
- 优先权： JP2007-019527 20070130; JP2007-100142 20070406; JP2007-100144 20070406
- 国际申请： PCT/JP2008/051056 WO 20080125
- 国际公布： WO2008/093606 WO 20080807
- 主分类号： G06F13/00
- IPC分类号： G06F13/00
摘要：
When an access device accesses a nonvolatile memory device, the nonvolatile memory device or the access device detects or calculates a temperature T of the nonvolatile memory device. A temperature-adaptive control part of the nonvolatile memory device controls an access rate to a nonvolatile memory on the basis of the temperature T. Accordingly, the control part controls the rate so that the temperature T of the nonvolatile memory devices cannot exceed a limit temperature Trisk. In this manner, a nonvolatile memory system can eliminate a risk of a burn when ejecting the semiconductor memory device and can read and write data at a high speed.
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