发明授权
- 专利标题： Multiple-gate transistors and processes of making same
- 专利标题（中）： 多栅极晶体管及其制造方法
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申请号： US13216569申请日： 2011-08-24
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公开(公告)号： US08211771B2公开(公告)日： 2012-07-03
- 发明人: Ravi Pillarisetty , Jack Kavalieros , Marko Radosavljevic , Benjamin Chu-Kung
- 申请人： Ravi Pillarisetty , Jack Kavalieros , Marko Radosavljevic , Benjamin Chu-Kung
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 John N. Greaves
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A microelectronic device includes a P-I-N (p+ region, intrinsic semiconductor, and n+ region) semiconductive body with a first gate and a second gate. The first gate is a gate stack disposed on an upper surface plane, and the second gate accesses the semiconductive body from a second plane that is out of the first plane.
公开/授权文献
- US20110312140A1 MULTIPLE-GATE TRANSISTORS AND PROCESSES OF MAKING SAME 公开/授权日：2011-12-22
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