Invention Grant
- Patent Title: Methods for preparation of high-purity polysilicon rods using a metallic core means
- Patent Title (中): 使用金属芯制备高纯度多晶硅棒的方法
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Application No.: US12160837Application Date: 2007-05-21
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Publication No.: US08216643B2Publication Date: 2012-07-10
- Inventor: Hee Young Kim , Kyung Koo Yoon , Yong Ki Park , Won Choon Choi , Sang Jin Moon
- Applicant: Hee Young Kim , Kyung Koo Yoon , Yong Ki Park , Won Choon Choi , Sang Jin Moon
- Applicant Address: KR Daejeon
- Assignee: Korea Research Institute of Chemical Technology
- Current Assignee: Korea Research Institute of Chemical Technology
- Current Assignee Address: KR Daejeon
- Agency: Frommer Lawrence & Haug LLP
- Agent Ronald R Santucci
- Priority: KR10-2006-0045707 20060522
- International Application: PCT/KR2007/002457 WO 20070521
- International Announcement: WO2007/136209 WO 20071129
- Main IPC: C23C16/24
- IPC: C23C16/24

Abstract:
A method for preparing a polysilicon rod using a metallic core means, including: installing a core means in an inner space of a deposition reactor used for preparing a silicon rod, the core means being constituted by forming at least one separation layer on the surface of a metallic core element and being connected to an electrode means, heating the core means by supplying electricity through the electrode means, and supplying a reaction gas into the inner space for silicon deposition, thereby forming a deposition output in an outward direction on the surface of the core means. The deposition output and the core means can be separated easily from the silicon rod output obtained by the process of silicon deposition, and the contamination of the deposition output caused by impurities of the metallic core element can be minimized, thereby a high-purity silicon can be prepared more economically and conveniently.
Public/Granted literature
- US20100221454A1 Methods for Preparation of High-Purity Polysilicon Rods Using a Metallic Core Means Public/Granted day:2010-09-02
Information query
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