发明授权
- 专利标题： Exposure mask and method for manufacturing same and method for manufacturing semiconductor device
- 专利标题（中）： 曝光掩模及其制造方法以及制造半导体器件的方法
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申请号： US12700457申请日： 2010-02-04
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公开(公告)号： US08216744B2公开(公告)日： 2012-07-10
- 发明人: Masamitsu Itoh
- 申请人： Masamitsu Itoh
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2009-025594 20090206
- 主分类号： G03F1/40
- IPC分类号： G03F1/40
摘要：
An exposure mask includes: an insulative substrate; a light reflecting film provided on the substrate; a light absorbing film provided on the light reflecting film and forming a pattern in a center region on the substrate; and an interconnect provided on the substrate, the light reflecting film and the light absorbing film not being provided in a frame-shaped region surrounding the center region, and the interconnect being placed so that a portion of a laminated film composed of the light reflecting film and the light absorbing film located inside the frame-shaped region is electrically connected to a portion of the laminated film located outside the frame-shaped region.
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