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    TRANSPORT COMPLEX AND TRANSPORT MODULE INCLUDING THE SAME
    4.
    发明申请
    TRANSPORT COMPLEX AND TRANSPORT MODULE INCLUDING THE SAME 有权

    公开(公告)号：US20210373434A1

    公开(公告)日：2021-12-02

    申请号：US17188457

    申请日：2021-03-01

    Applicant: Samsung Display Co., LTD.

    Inventor： SUKBIN JUNG ,  Sung Jin Na

    IPC: G03F1/40 ,  G03F1/48

    Abstract: Transport complexes and transport modules including the same. The transport complex comprises a metal stick having one surface and other surface that are spaced apart from each other in one direction, a first protection sheet adjacent to the one surface, and a second protection sheet adjacent to the other surface. In wavelength ranges of about 380 nm to about 800 nm, each of the first and second protection sheets has transmittance of about 0% to about 50% and absorptance of less than about 95%.

    Lithography mask and method
    5.
    发明授权
    Lithography mask and method 有权

    公开(公告)号：US10481483B2

    公开(公告)日：2019-11-19

    申请号：US15816393

    申请日：2017-11-17

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Shiang-Bau Wang ,  Syun-Ming Jang

    IPC: G03F1/24 ,  H01L21/027 ,  G03F1/46 ,  G03F7/20 ,  G03F1/76 ,  G03F1/80 ,  G03F1/52 ,  G03F1/40 ,  G03F1/42

    Abstract: In an embodiment, a photomask includes: a substrate over a first conductive layer, the substrate formed of a low thermal expansion material (LTEM); a second conductive layer over the first conductive layer; a reflective film stack over the substrate; a capping layer over the reflective film stack; an absorption layer over the capping layer; and an antireflection (ARC) layer over the absorption layer, where the ARC layer and the absorption layer have a plurality of openings in a first region exposing the capping layer, where the ARC layer, the absorption layer, the capping layer, and the reflective film stack have a trench in a second region exposing the second conductive layer.

    Methods of fabricating reticles with subdivided blocking regions
    8.
    发明授权
    Methods of fabricating reticles with subdivided blocking regions 有权
    制造具有细分阻挡区域的掩模版的方法

    公开(公告)号：US08383301B2

    公开(公告)日：2013-02-26

    申请号：US13305987

    申请日：2011-11-29

    Applicant: J. Brett Rolfson

    Inventor： J. Brett Rolfson

    IPC: G03F1/00 ,  G03F1/40

    CPC classification number: G03F1/00 ,  G03F1/32 ,  G03F1/40

    Abstract: Methods for designing, fabricating, and using attenuated phase shift reticles, or photomasks are disclosed. Methods are also disclosed for subdividing the radiation blocking regions of previously fabricated reticles of previously existing designs. The methods may include forming radiation blocking regions that are subdivided, by cut lines, into discrete, spaced apart sections with dimensions (e.g., surface area, etc.) configured to minimize or eliminate the buildup of electrostatic energy by the radiation blocking regions and/or the discharge of electrostatic energy from the radiation blocking regions and the damage that may be caused by such electrostatic discharge. The methods may include configuring the reticle to prevent radiation from passing through the cut lines between adjacent sections of a subdivided radiation blocking region.

    Abstract translation: 公开了设计，制造和使用衰减相移掩模版或光掩模的方法。 还公开了用于细分先前存在的设计的先前制造的掩模版的辐射阻挡区域的方法。 所述方法可以包括将辐射阻挡区域形成为通过切割线细分成具有尺寸（例如，表面积等）的离散且间隔开的部分，其被配置成最小化或消除由辐射阻挡区域产生的静电能量和/ 或者从辐射阻挡区域放出静电能和由这种静电放电引起的损坏。 所述方法可以包括配置掩模版以防止辐射穿过细分辐射阻挡区域的相邻部分之间的切割线。

    Process for fabricating phase shift mask and process of semiconductor integrated circuit device
    9.
    发明授权
    Process for fabricating phase shift mask and process of semiconductor integrated circuit device 失效
    制造相移掩模和半导体集成电路器件的工艺

    公开(公告)号：US5677092A

    公开(公告)日：1997-10-14

    申请号：US383839

    申请日：1995-02-06

    Applicant: Toshitsugu Takekuma ,  Haruo Ii ,  Kazuya Ito

    Inventor： Toshitsugu Takekuma ,  Haruo Ii ,  Kazuya Ito

    IPC: G03F1/26 ,  G03F1/30 ,  G03F1/36 ,  G03F1/40 ,  G03F1/68 ,  G03F1/70 ,  G03F1/80 ,  G06F17/50 ,  H01L21/027 ,  G03F7/00

    CPC classification number: G03F1/30 ,  G03F1/26 ,  Y10S430/143

    Abstract: When the data of a mask pattern of a phase shift mask is to be made, the pattern data is separated into a real pattern data layer having the data of real patterns and a phase shift pattern data layer having the data of phase shift patterns. After this, it is verified whether or not the mask pattern satisfies the regulation of the gap of in-phase patterns, in which lights having transmitted through patterns adjacent to each other are in phase. It is also verified whether or not the mask pattern satisfies the regulation of the gap of out-of-phase patterns, in which lights having transmitted through patterns adjacent to each other are out of phase.

    Abstract translation: 当要进行相移掩模的掩模图案的数据时，将图案数据分离成具有实数图案的实际图案数据层和具有相移图案的数据的相移图案数据层。 此后，验证掩模图案是否满足彼此相邻的透过图案的光同相的同相图案的间隙的调节。 还验证了掩模图案是否满足彼此相邻的具有透射图案的光异相的异相图案的间隙的调节。

    Mask and projection exposure method
    10.
    发明授权
    Mask and projection exposure method 失效
    面罩和投影曝光方法

    公开(公告)号：US5633101A

    公开(公告)日：1997-05-27

    申请号：US303667

    申请日：1994-09-09

    Applicant: Yuji Imai

    Inventor： Yuji Imai

    IPC: G03F1/40 ,  G03F1/50 ,  G03F7/20 ,  H01L21/027 ,  G03F9/00

    CPC classification number: G03F7/70241 ,  G03F1/48 ,  G03F7/70866 ,  G03F7/70875

    Abstract: An exposure mask formed with a predetermined pattern for exposure on a substrate to be subjected to exposure comprises a glass substrate and a heat conductive film having a thermal conductivity higher than that of the glass substrate, wherein the heat conductive film is so formed as to cover substantially an entire surface of the glass substrate, and the pattern is so formed as to be in contact with the heat conductive film.

    Abstract translation: 在曝光用基板上曝光的预定图案形成的曝光掩模包括玻璃基板和导热性比玻璃基板的热导率高的导热膜，其中导热膜形成为覆盖 基本上是玻璃基板的整个表面，并且图案形成为与导热膜接触。

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