发明授权
US08216861B1 Dielectric recovery of plasma damaged low-k films by UV-assisted photochemical deposition
有权
通过紫外辅助光化学沉积等离子体损伤低k膜的介电回收
- 专利标题： Dielectric recovery of plasma damaged low-k films by UV-assisted photochemical deposition
- 专利标题（中）： 通过紫外辅助光化学沉积等离子体损伤低k膜的介电回收
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申请号： US13171132申请日： 2011-06-28
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公开(公告)号： US08216861B1公开(公告)日： 2012-07-10
- 发明人: Kang Sub Yim , Thomas Nowak , Bo Xie , Alexandros T. Demos
- 申请人： Kang Sub Yim , Thomas Nowak , Bo Xie , Alexandros T. Demos
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan, LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and carbon-containing compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.
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