公开(公告)号：US20120270339A1

公开(公告)日：2012-10-25

申请号：US13093351

申请日：2011-04-25

申请人： Bo Xie ,  Alexandros T. Demos ,  Kang Sub Yim ,  Thomas Nowak ,  Kelvin Chan

发明人： Bo Xie ,  Alexandros T. Demos ,  Kang Sub Yim ,  Thomas Nowak ,  Kelvin Chan

IPC分类号： H01L21/30

CPC分类号： H01L21/3105 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

摘要： Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.

摘要翻译： 提供修复损坏的低k膜的方法。 在薄膜的处理期间，例如在蚀刻，灰化和平坦化期间，低k膜的损伤发生。 低k膜的处理导致水存储在膜的孔中，并进一步在低k膜结构中形成亲水性化合物。 包含紫外线（UV）辐射和甲硅烷基化合物的修复过程从孔中除去水分，并从低k膜结构中进一步除去亲水性化合物。

公开(公告)号：US08216861B1

公开(公告)日：2012-07-10

申请号：US13171132

申请日：2011-06-28

申请人： Kang Sub Yim ,  Thomas Nowak ,  Bo Xie ,  Alexandros T. Demos

发明人： Kang Sub Yim ,  Thomas Nowak ,  Bo Xie ,  Alexandros T. Demos

IPC分类号： H01L21/00

CPC分类号： H01L21/3105 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831

摘要： Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and carbon-containing compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.

摘要翻译： 提供修复损坏的低k膜的方法。 在薄膜的处理期间，例如在蚀刻，灰化和平坦化期间，低k膜的损伤发生。 低k膜的处理导致水存储在膜的孔中，并进一步在低k膜结构中形成亲水性化合物。 包含紫外线（UV）辐射和含碳化合物的修复过程从孔中除去水，并进一步从低k膜结构中除去亲水性化合物。

公开(公告)号：US08492170B2

公开(公告)日：2013-07-23

申请号：US13093351

申请日：2011-04-25

申请人： Bo Xie ,  Alexandros T. Demos ,  Kang Sub Yim ,  Thomas Nowak ,  Kelvin Chan

发明人： Bo Xie ,  Alexandros T. Demos ,  Kang Sub Yim ,  Thomas Nowak ,  Kelvin Chan

IPC分类号： H01L21/30

CPC分类号： H01L21/3105 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

摘要： Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.

摘要翻译： 提供修复损坏的低k膜的方法。 在薄膜的处理期间，例如在蚀刻，灰化和平坦化期间，低k膜的损伤发生。 低k膜的处理导致水存储在膜的孔中，并进一步在低k膜结构中形成亲水性化合物。 包含紫外线（UV）辐射和甲硅烷基化合物的修复过程从孔中除去水分，并从低k膜结构中进一步除去亲水性化合物。

公开(公告)号：US20070207275A1

公开(公告)日：2007-09-06

申请号：US11508544

申请日：2006-08-23

申请人： Thomas Nowak ,  Kang Sub Yim ,  Sum-Yee Betty Tang ,  Kwangduk Douglas Lee ,  Vu Ngoc Tran Nguyen ,  Dennis Singleton ,  Martin Jay Seamons ,  Karthik Janakiraman ,  Ganesh Balasubramanian ,  Mohamed Ayoub ,  Wendy H. Yeh ,  Alexandros T. Demos ,  Hichem M'Saad

发明人： Thomas Nowak ,  Kang Sub Yim ,  Sum-Yee Betty Tang ,  Kwangduk Douglas Lee ,  Vu Ngoc Tran Nguyen ,  Dennis Singleton ,  Martin Jay Seamons ,  Karthik Janakiraman ,  Ganesh Balasubramanian ,  Mohamed Ayoub ,  Wendy H. Yeh ,  Alexandros T. Demos ,  Hichem M'Saad

IPC分类号： H05H1/24

CPC分类号： C23C16/4405 ,  B08B7/0035 ,  H01J37/32357 ,  H01J37/32862

摘要： Methods for cleaning semiconductor processing chambers used to process carbon-containing films, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films including silicon, oxygen, and carbon are provided. The methods include using a remote plasma source to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber. The reactive species are generated from an oxygen-containing gas, such as O2, and/or a halogen-containing gas, such as NF3. An oxygen-based ashing process may also be used to remove carbon deposits from the interior surfaces of the chamber before the chamber is exposed to the reactive species from the remote plasma source.

摘要翻译： 提供了用于处理用于处理含碳膜的半导体处理室的方法，例如非晶碳膜，包含硅和碳的阻挡膜以及包括硅，氧和碳的低介电常数膜。 这些方法包括使用远程等离子体源来产生在腔室中没有RF功率的情况下清洁处理室的内表面的反应物质。 反应性物质由含氧气体（例如O 2）和/或含卤素气体如NF 3 N产生。 在室暴露于来自远程等离子体源的反应物质之前，还可以使用氧基灰化方法从室的内表面去除碳沉积物。

公开(公告)号：US08911553B2

公开(公告)日：2014-12-16

申请号：US13248656

申请日：2011-09-29

申请人： Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Thomas Nowak ,  Jianhua Zhou

发明人： Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Thomas Nowak ,  Jianhua Zhou

IPC分类号： C23C16/455 ,  C23C16/48 ,  C23C16/56 ,  H01L21/67 ,  C23C16/44 ,  H01L21/677

CPC分类号： C23C16/56 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/482 ,  H01L21/6719 ,  H01L21/67742 ,  Y10T137/0391

摘要： Embodiments of the invention generally provide apparatuses and methods for controlling the gas flow profile within a processing chamber. In one embodiment, a processing tool includes an ultraviolet processing chamber defining a processing region, a substrate support, a window disposed between a UV radiation source and the substrate support, and a transparent showerhead disposed within the processing region between the window and the substrate support and having one or more transparent showerhead passages between upper and lower processing regions. The processing tool also includes a gas distribution ring having one or more gas distribution ring passages between a gas distribution ring inner channel and the upper processing region and a gas outlet ring positioned below the gas distribution ring, the gas outlet ring having one or more gas outlet passages between a gas outlet ring inner channel within the gas outlet ring and the lower processing region.

摘要翻译： 本发明的实施例通常提供用于控制处理室内的气流分布的装置和方法。 在一个实施例中，处理工具包括限定处理区域的紫外线处理室，衬底支撑件，设置在UV辐射源和衬底支撑件之间的窗口，以及布置在窗口和衬底支撑件之间的处理区域内的透明花洒 并且在上下处理区域之间具有一个或多个透明花洒通道。 处理工具还包括气体分配环，气体分配环具有在气体分配环内部通道和上部加工区域之间的一个或多个气体分配环通道和位于气体分配环下方的气体出口环，气体出口环具有一个或多个气体 气体出口环内的气体出口环内部通道和下部加工区域之间的出口通道。

公开(公告)号：US08702870B2

公开(公告)日：2014-04-22

申请号：US12987948

申请日：2011-01-10

申请人： Sang In Yi ,  Kelvin Chan ,  Thomas Nowak ,  Alexandros T. Demos

发明人： Sang In Yi ,  Kelvin Chan ,  Thomas Nowak ,  Alexandros T. Demos

IPC分类号： B08B9/093

CPC分类号： H01L21/67028 ,  B08B7/0057 ,  H01L21/67115 ,  H01L21/6719

摘要： A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.

摘要翻译： 一种用于清洁衬底处理室的方法，包括在限定一个或多个处理区域的处理室内处理一批衬底。 处理批次的基板可以在具有各种子步骤的子程序中执行，该子程序包括在处理室内处理来自批料的基板，从处理室移除基板，将臭氧引入处理室，以及将该室暴露于 紫外线不到一分钟。 可以重复衬底批处理子步骤，直到处理批次中的最后一个衬底。 在批次处理最后一个基板之后，该方法包括从处理室移除最后的基板，将臭氧引入处理室; 并将处理室暴露于紫外光下3至15分钟。

公开(公告)号：US20120090691A1

公开(公告)日：2012-04-19

申请号：US13248656

申请日：2011-09-29

申请人： Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Thomas Nowak ,  Jianhua Zhou

发明人： Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Thomas Nowak ,  Jianhua Zhou

IPC分类号： F17D1/16 ,  B08B5/00 ,  C23C16/48

CPC分类号： C23C16/56 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/482 ,  H01L21/6719 ,  H01L21/67742 ,  Y10T137/0391

摘要： Embodiments of the invention generally provide apparatuses and methods for controlling the gas flow profile within a processing chamber. In one embodiment, a processing tool includes an ultraviolet processing chamber defining a processing region, a substrate support, a window disposed between a UV radiation source and the substrate support, and a transparent showerhead disposed within the processing region between the window and the substrate support and having one or more transparent showerhead passages between upper and lower processing regions. The processing tool also includes a gas distribution ring having one or more gas distribution ring passages between a gas distribution ring inner channel and the upper processing region and a gas outlet ring positioned below the gas distribution ring, the gas outlet ring having one or more gas outlet passages between a gas outlet ring inner channel within the gas outlet ring and the lower processing region.

摘要翻译： 本发明的实施例通常提供用于控制处理室内的气流分布的装置和方法。 在一个实施例中，处理工具包括限定处理区域的紫外线处理室，衬底支撑件，设置在UV辐射源和衬底支撑件之间的窗口，以及布置在窗口和衬底支撑件之间的处理区域内的透明花洒 并且在上下处理区域之间具有一个或多个透明花洒通道。 处理工具还包括气体分配环，气体分配环具有在气体分配环内部通道和上部加工区域之间的一个或多个气体分配环通道和位于气体分配环下方的气体出口环，气体出口环具有一个或多个气体 气体出口环内的气体出口环内部通道和下部加工区域之间的出口通道。

公开(公告)号：US20110100394A1

公开(公告)日：2011-05-05

申请号：US12987948

申请日：2011-01-10

申请人： Sang In Yi ,  Kelvin Chan ,  Thomas Nowak ,  Alexandros T. Demos

发明人： Sang In Yi ,  Kelvin Chan ,  Thomas Nowak ,  Alexandros T. Demos

IPC分类号： B08B7/00

CPC分类号： H01L21/67028 ,  B08B7/0057 ,  H01L21/67115 ,  H01L21/6719

摘要： A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.

摘要翻译： 一种用于清洁衬底处理室的方法，包括在限定一个或多个处理区域的处理室内处理一批衬底。 处理批次的基板可以在具有各种子步骤的子程序中执行，该子程序包括在处理室内处理来自批料的基板，从处理室移除基板，将臭氧引入处理室，以及将该室暴露于 紫外线不到一分钟。 可以重复衬底批处理子步骤，直到处理批次中的最后一个衬底。 在批次处理最后一个基板之后，该方法包括从处理室移除最后的基板，将臭氧引入处理室; 并将处理室暴露于紫外光下3至15分钟。

公开(公告)号：US20100018548A1

公开(公告)日：2010-01-28

申请号：US12178523

申请日：2008-07-23

申请人： Sang In Yi ,  Kelvin Chan ,  Thomas Nowak ,  Alexandros T. Demos

发明人： Sang In Yi ,  Kelvin Chan ,  Thomas Nowak ,  Alexandros T. Demos

IPC分类号： B08B7/00

CPC分类号： H01L21/67028 ,  B08B7/0057 ,  H01L21/67115 ,  H01L21/6719

摘要： A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.

摘要翻译： 一种用于清洁衬底处理室的方法，包括在限定一个或多个处理区域的处理室内处理一批衬底。 处理批次的基板可以在具有各种子步骤的子程序中执行，该子程序包括在处理室内处理来自批料的基板，从处理室移除基板，将臭氧引入处理室，并将该室暴露于 紫外线不到一分钟。 可以重复基底批处理子步骤，直到处理批次中的最后一个基底。 在批次处理最后一个基板之后，该方法包括从处理室移除最后的基板，将臭氧引入处理室; 并将处理室暴露于紫外光下3至15分钟。

公开(公告)号：US08778813B2

公开(公告)日：2014-07-15

申请号：US13102846

申请日：2011-05-06

申请人： Ramprakash Sankarakrishnan ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Dale R. Du Bois ,  Mark Fodor ,  Jianhua Zhou ,  Amit Bansal ,  Mohamad A. Ayoub ,  Shahid Shaikh ,  Patrick Reilly ,  Deenesh Padhi ,  Thomas Nowak

发明人： Ramprakash Sankarakrishnan ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Dale R. Du Bois ,  Mark Fodor ,  Jianhua Zhou ,  Amit Bansal ,  Mohamad A. Ayoub ,  Shahid Shaikh ,  Patrick Reilly ,  Deenesh Padhi ,  Thomas Nowak

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/00 ,  H01J37/32 ,  C23C16/46 ,  C23C16/509 ,  H01L21/67 ,  H01L21/30 ,  H01L21/42 ,  C23C16/00 ,  B05C11/11

CPC分类号： H01L21/6719 ,  C23C16/46 ,  C23C16/5096 ,  H01J37/32495 ,  H01J37/32568 ,  H01J37/32651 ,  H01J37/32715

摘要： An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.

摘要翻译： 提供了一种用于等离子体处理衬底的装置。 该设备包括处理室，设置在处理室中的衬底支撑件，设置在衬底支撑件下方的处理室中的屏蔽构件以及耦合到处理室的盖组件。 盖组件包括耦合到电源的导电气体分配器和通过电绝缘体与导电气体分配器和室主体分离的电极。 电极也耦合到电源。 衬底支撑件形成有允许很少偏离平行度的刚度。 屏蔽构件对室主体的下部的基板传送开口进行热屏蔽。 泵送气室位于基板支撑处理位置下方并与其间隔开。