发明授权
US08221193B2 Closed loop control of pad profile based on metrology feedback 有权
基于计量反馈的焊盘轮廓闭环控制

Closed loop control of pad profile based on metrology feedback
摘要:
A chemical mechanical polishing apparatus includes a metrology system that detects the thickness of the polishing pad as semiconductor wafers are processed and the thickness of the polishing pad is reduced. The chemical mechanical polishing apparatus includes a controller that adjusts the rate of material removal of a conditioning disk when areas of the polishing surface are detected that are higher or lower than the adjacent areas of the polishing pad.
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