Invention Grant
- Patent Title: Carbon-nanotube n-doping material and methods of manufacture thereof
- Patent Title (中): 碳纳米管n掺杂材料及其制造方法
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Application No.: US12437221Application Date: 2009-05-07
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Publication No.: US08221715B2Publication Date: 2012-07-17
- Inventor: Hyeon Jin Shin , Young Hee Lee , Jaeyoung Choi , Seonmi Yoon , Soo Min Kim
- Applicant: Hyeon Jin Shin , Young Hee Lee , Jaeyoung Choi , Seonmi Yoon , Soo Min Kim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2008-0119974 20081128
- Main IPC: H01B1/00
- IPC: H01B1/00

Abstract:
A compound containing at least two pyridinium derivatives in its molecular structure and being in a reduced form thereof may be used as a CNT n-doping material. The compound may donate electrons spontaneously to CNTs to n-dope the CNTs, while being oxidized into its stable state. An n-doped CNT that is doped with the CNT n-doping material may maintain a stable n-doped state for a long time without being dedoped even in the air and/or water. Further, the n-doped state may be easily controlled when using the CNT n-doping material.
Public/Granted literature
- US20100133480A1 CARBON-NANOTUBE N-DOPING MATERIAL AND METHODS OF MANUFACTURE THEREOF Public/Granted day:2010-06-03
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