Invention Grant
US08222066B2 Eliminate release etch attack by interface modification in sacrificial layers
失效
通过牺牲层中的界面修改消除释放蚀刻攻击
- Patent Title: Eliminate release etch attack by interface modification in sacrificial layers
- Patent Title (中): 通过牺牲层中的界面修改消除释放蚀刻攻击
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Application No.: US12061592Application Date: 2008-04-02
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Publication No.: US08222066B2Publication Date: 2012-07-17
- Inventor: Thanh Nghia Tu , Qi Luo , Chia Wei Yang , David Heald , Evgeni Gousev , Chih-Wei Chiang
- Applicant: Thanh Nghia Tu , Qi Luo , Chia Wei Yang , David Heald , Evgeni Gousev , Chih-Wei Chiang
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Mems Technologies, Inc.
- Current Assignee: Qualcomm Mems Technologies, Inc.
- Current Assignee Address: US CA San Diego
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Methods of making a microelectromechanical system (MEMS) device are described. In some embodiments, the method includes forming a sacrificial layer over a substrate, treating at least a portion of the sacrificial layer to form a treated sacrificial portion, forming an overlying layer over at least a part of the treated sacrificial portion, and at least partially removing the treated sacrificial portion to form a cavity situated between the substrate and the overlying layer, the overlying layer being exposed to the cavity.
Public/Granted literature
- US20080311690A1 ELIMINATE RELEASE ETCH ATTACK BY INTERFACE MODIFICATION IN SACRIFICIAL LAYERS Public/Granted day:2008-12-18
Information query
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