发明授权
US08222066B2 Eliminate release etch attack by interface modification in sacrificial layers
失效
通过牺牲层中的界面修改消除释放蚀刻攻击
- 专利标题： Eliminate release etch attack by interface modification in sacrificial layers
- 专利标题（中）： 通过牺牲层中的界面修改消除释放蚀刻攻击
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申请号： US12061592申请日： 2008-04-02
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公开(公告)号： US08222066B2公开(公告)日： 2012-07-17
- 发明人: Thanh Nghia Tu , Qi Luo , Chia Wei Yang , David Heald , Evgeni Gousev , Chih-Wei Chiang
- 申请人： Thanh Nghia Tu , Qi Luo , Chia Wei Yang , David Heald , Evgeni Gousev , Chih-Wei Chiang
- 申请人地址： US CA San Diego
- 专利权人： Qualcomm Mems Technologies, Inc.
- 当前专利权人： Qualcomm Mems Technologies, Inc.
- 当前专利权人地址： US CA San Diego
- 代理机构： Knobbe, Martens, Olson & Bear, LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
Methods of making a microelectromechanical system (MEMS) device are described. In some embodiments, the method includes forming a sacrificial layer over a substrate, treating at least a portion of the sacrificial layer to form a treated sacrificial portion, forming an overlying layer over at least a part of the treated sacrificial portion, and at least partially removing the treated sacrificial portion to form a cavity situated between the substrate and the overlying layer, the overlying layer being exposed to the cavity.