发明授权
- 专利标题: Method for manufacturing semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US11705828申请日: 2007-02-14
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公开(公告)号: US08222116B2公开(公告)日: 2012-07-17
- 发明人: Yasuhiro Jinbo , Masafumi Morisue , Hajime Kimura , Shunpei Yamazaki
- 申请人: Yasuhiro Jinbo , Masafumi Morisue , Hajime Kimura , Shunpei Yamazaki
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP2006-058513 20060303
- 主分类号: H01L21/30
- IPC分类号: H01L21/30 ; H01L21/46
摘要:
The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.
公开/授权文献
- US20070295973A1 Method for manufacturing semiconductor device 公开/授权日:2007-12-27
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