发明授权
- 专利标题： Fin and finFET formation by angled ion implantation
- 专利标题（中）： 鳍和finFET通过成角度离子注入形成
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申请号： US12368561申请日： 2009-02-10
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公开(公告)号： US08222154B2公开(公告)日： 2012-07-17
- 发明人: Bruce B. Doris , Kangguo Cheng , Geng Wang
- 申请人： Bruce B. Doris , Kangguo Cheng , Geng Wang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 H. Daniel Schnurmann
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A semiconductor device is formed by providing a substrate and forming a semiconductor-containing layer atop the substrate. A mask having a plurality of openings is then formed atop the semiconductor-containing layer, wherein adjacent openings of the plurality of openings of the mask are separated by a minimum feature dimension. Thereafter, an angled ion implantation is performed to introduce dopants to a first portion of the semiconductor-containing layer, wherein a remaining portion that is substantially free of dopants is present beneath the mask. The first portion of the semiconductor-containing layer containing the dopants is removed selective to the remaining portion of semiconductor-containing layer that is substantially free of the dopants to provide a pattern of sublithographic dimension, and the pattern is transferred into the substrate to provide a fin structure of sublithographic dimension.
公开/授权文献
- US20100203732A1 FIN AND FINFET FORMATION BY ANGLED ION IMPLANTATION 公开/授权日：2010-08-12
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