发明授权
US08222630B2 Organic memory device having memory active region formed by embossing structure
有权
具有由压花结构形成的存储器有源区的有机存储器件
- 专利标题： Organic memory device having memory active region formed by embossing structure
- 专利标题（中）： 具有由压花结构形成的存储器有源区的有机存储器件
-
申请号： US11402376申请日： 2006-04-12
-
公开(公告)号： US08222630B2公开(公告)日： 2012-07-17
- 发明人: Won Jae Joo , Kwang Hee Lee , Sang Kyun Lee , Tae Lim Choi
- 申请人： Won Jae Joo , Kwang Hee Lee , Sang Kyun Lee , Tae Lim Choi
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Cantor Colburn LLP
- 优先权： KR10-2005-0086931 20050916
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L51/10
摘要：
An organic memory device having a memory active region formed by an embossing structure. This invention provides an organic memory device including a substrate, a first electrode formed on the substrate, an organic memory layer formed on the first electrode, a second electrode formed on the organic memory layer and an embossing structure provided at the organic memory layer to form a memory active region.