发明授权
- 专利标题： Semiconductor memory device
- 专利标题（中）： 半导体存储器件
-
申请号： US12882803申请日： 2010-09-15
-
公开(公告)号： US08223536B2公开(公告)日： 2012-07-17
- 发明人: Yasuko Tonomura , Shuichi Tsukada
- 申请人： Yasuko Tonomura , Shuichi Tsukada
- 申请人地址： JP Tokyo
- 专利权人： Elpida Memory, Inc.
- 当前专利权人： Elpida Memory, Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Morrison & Foerster LLP
- 优先权： JP2009-215780 20090917
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A semiconductor memory device comprises: a phase change element (RP) and a memory cell transistor (MN0) that controls writing and reading of data with respect to the phase change element (RP); the memory cell transistor (MN0) supplies a current to the phase change element (RP) based on a first potential (VPS) in a first (read) operation mode, and in a second (write) operation mode supplies a current based on the first potential (VPS), and subsequently supplies a current based on a second potential (VPP) higher than the first potential (VPS). In a write operation, consumed current is reduced.
公开/授权文献
- US20110063890A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2011-03-17
信息查询
