Invention Grant
- Patent Title: Memory storage device and a control method thereof
- Patent Title (中): 存储器存储装置及其控制方法
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Application No.: US12457402Application Date: 2009-06-10
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Publication No.: US08225050B2Publication Date: 2012-07-17
- Inventor: Li-Pin Chang , Ming-Dar Chen
- Applicant: Li-Pin Chang , Ming-Dar Chen
- Applicant Address: TW Taipei
- Assignee: A-Data Technology Co., Ltd.
- Current Assignee: A-Data Technology Co., Ltd.
- Current Assignee Address: TW Taipei
- Agency: Rosenberg, Klein & Lee
- Priority: TW97151552A 20081231
- Main IPC: G06F12/00
- IPC: G06F12/00
Abstract:
The present invention discloses a control method of a memory storage device which includes a high density memory. The high density memory is composed of a plurality of MSB pages and LSB pages. The major feature of the method is such that it determines the property of data by its data length, and then decides where the data is to be written according to its property.
Public/Granted literature
- US20100169586A1 Memory storage device and a control method thereof Public/Granted day:2010-07-01
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