公开(公告)号：US08418030B2

公开(公告)日：2013-04-09

申请号：US12243472

申请日：2008-10-01

申请人： Ming-Dar Chen ,  Chuan-Sheng Lin ,  Hsiang-An Hsieh ,  Hui-Neng Chang

发明人： Ming-Dar Chen ,  Chuan-Sheng Lin ,  Hsiang-An Hsieh ,  Hui-Neng Chang

IPC分类号： G11C29/00

CPC分类号： G11C29/42 ,  G06F11/1068 ,  G11C29/44 ,  G11C2029/0405 ,  G11C2029/3602

摘要： A storage system with a data recovery function and its method reduce errors in a storage medium to a recoverable range of a general ECC function by repeating a testing and recovery procedure for one or more times to assure the accuracy of reading data and enhance the data reliability effectively. The data recovery procedure includes the steps of providing test data by a test data generator of the storage system, writing the test data into a memory block where error data is found, finding an error bit by reading the test data, reducing the error to a recoverable range of the ECC technique by the recovery procedure. If the error bit cannot be found or reduced to a recoverable range of the ECC technique within an upper limit of the number of tests, the memory block is marked as bad.

摘要翻译： 具有数据恢复功能的存储系统及其方法通过重复一次或多次的测试和恢复过程将存储介质中的错误减少到通用ECC功能的可恢复范围，以确保读取数据的准确性并提高数据可靠性 有效。 数据恢复过程包括以下步骤：由存储系统的测试数据发生器提供测试数据，将测试数据写入到发现错误数据的存储器块中，通过读取测试数据找到错误位，将错误减少到 通过恢复程序可以恢复ECC技术的范围。 如果错误位在测试次数的上限内不能被发现或缩小到ECC技术的可恢复范围，则存储块被标记为坏。

公开(公告)号：US08370602B2

公开(公告)日：2013-02-05

申请号：US12292572

申请日：2008-11-21

申请人： Ming-Dar Chen ,  Hsiang-An Hsieh

发明人： Ming-Dar Chen ,  Hsiang-An Hsieh

IPC分类号： G06F12/10

CPC分类号： G06F12/023

摘要： A method for memory space management is disclosed. It uses a resident program loaded into an operation system or the controller of a storage device to monitor the storage space and the resource allocation of the file system of the storage device. The status of the logical address with an erased and invalid data mapped with a physical block is checked via a L2P mapping table. By using a data erase instruction, the controller modifies the L2P mapping table to cancel the link relation between the physical block and the logical address and erase the physical block to release the memory space. Finally, the check location is stored for a next check. The method for memory space management improves the access speed and the usage life of the storage device.

公开(公告)号：US20100313102A1

公开(公告)日：2010-12-09

申请号：US12790786

申请日：2010-05-28

申请人： Ming-Dar Chen ,  Chuan-Sheng Lin

发明人： Ming-Dar Chen ,  Chuan-Sheng Lin

IPC分类号： H03M13/05 ,  G06F11/10

CPC分类号： G11C7/1006 ,  G06F11/1068 ,  G06F12/0246 ,  G06F2212/7207 ,  G11C2029/0411

摘要： An electronic storage device for connecting with a host system includes a flash memory including a number of memory segments, and a controller including an error correction segment capable of generating a first correction code and a second correction code according to a written data received by the controller. The written data, the first correction code and the second correction code are written into a memory segment of the flash memory by the controller. The first correction code is used for checking whether there is an error bit in the written data, and the second correction code is used for checking and correcting said error bit in the written data.

摘要翻译： 一种用于与主机系统连接的电子存储装置，包括一个包括多个存储器段的闪速存储器，以及一个控制器，该控制器包括一个能够根据由控制器接收到的写入数据产生第一校正码和第二校正码的纠错段 。 写入数据，第一校正码和第二校正码由控制器写入闪速存储器的存储器段。 第一校正码用于检查写入数据中是否存在错误位，并且第二校正码用于检查和校正写入数据中的所述错误位。

公开(公告)号：US07742353B2

公开(公告)日：2010-06-22

申请号：US12076672

申请日：2008-03-21

申请人： Ming-Dar Chen ,  Chuan-Sheng Lin ,  Hui-Neng Chang ,  Hsiang-An Hsieh

发明人： Ming-Dar Chen ,  Chuan-Sheng Lin ,  Hui-Neng Chang ,  Hsiang-An Hsieh

IPC分类号： G11C11/34

CPC分类号： G11C7/04

摘要： A solid state semiconductor storage device with temperature control function comprises a non-volatile memory unit, a temperature sensing element, and a control unit. The temperature sensing element is used for sensing the operation temperature of the solid state semiconductor storage device so as to provide a temperature sensing signal to the control unit. According to the temperature sensing signal, the control unit controls the operation mode of the solid state semiconductor storage device for achieving the function of temperature control.

摘要翻译： 具有温度控制功能的固态半导体存储装置包括非易失性存储单元，温度检测元件和控制单元。 温度感测元件用于感测固态半导体存储装置的工作温度，以向控制单元提供温度感测信号。 根据温度检测信号，控制单元控制用于实现温度控制功能的固态半导体存储装置的操作模式。

公开(公告)号：US20100095051A1

公开(公告)日：2010-04-15

申请号：US12385228

申请日：2009-04-02

申请人： Ming-Dar Chen ,  Hsiang-An Hsieh ,  Chuan-Sheng Lin

发明人： Ming-Dar Chen ,  Hsiang-An Hsieh ,  Chuan-Sheng Lin

IPC分类号： G06F12/00 ,  G06F12/06 ,  G06F12/16 ,  G06F12/02

CPC分类号： G06F12/0246 ,  G06F2212/7201 ,  G06F2212/7211

摘要： A control method for the memory system is suitable for a memory system to process the user data from a host. The control unit divides the address of the storage space of the host into a plurality of logical segments for accessing data. The memory system provides a storage space with a plurality of physical segments to access data. The control method comprises the following steps. Firstly, a master table is provided in the physical memory for recording the mapping relation between the addresses of the logical units and the addresses of the physical units. When the data is written, the mapping relation between the addresses of the logical units and the addresses of the physical units is adjusted according to the wear of the physical units. Finally, the data is written into the physical segment according to the master table.

摘要翻译： 用于存储器系统的控制方法适用于从主机处理用户数据的存储器系统。 控制单元将主机的存储空间的地址划分为用于访问数据的多个逻辑段。 存储器系统提供具有多个物理段的存储空间以访问数据。 控制方法包括以下步骤。 首先，在物理存储器中设置主表以记录逻辑单元的地址和物理单元的地址之间的映射关系。 当写入数据时，根据物理单元的磨损来调整逻辑单元的地址和物理单元的地址之间的映射关系。 最后，根据主表将数据写入物理段。

公开(公告)号：US20100037006A1

公开(公告)日：2010-02-11

申请号：US12509287

申请日：2009-07-24

申请人： Ming-Dar Chen ,  Hsiang-An Hsieh ,  Chuan-Sheng Lin

发明人： Ming-Dar Chen ,  Hsiang-An Hsieh ,  Chuan-Sheng Lin

IPC分类号： G06F12/00

CPC分类号： G11C16/349 ,  G06F12/0246 ,  G06F2212/7211 ,  G11C16/3495

摘要： A non-volatile memory of present invention includes a number of memory blocks and a static wear leveling device. The static wear leveling device includes a memory unit for storing the erase counts of the memory blocks and a controlling unit for getting the erase counts from the memory unit, and calculating the standard deviation based on the EC, and deciding the way of the static wear leveling cycle according to the standard deviation. The controlling unit deciding the way of the static wear leveling cycle include the steps of setting at least one predetermined threshold point and judging whether the standard deviation of the erase counts is smaller than the predetermined threshold point. If the standard deviation of the erase counts is smaller than the predetermined threshold point, the static wear leveling cycle starts for a first amount of cycles and moves the static data stored a first number of memory blocks. If the standard deviation of the erase counts is bigger than the predetermined threshold point, starts for a second amount of cycles and moves the static data stored a second number of memory blocks.

摘要翻译： 本发明的非易失性存储器包括多个存储块和静态损耗均衡装置。 静态损耗均衡装置包括用于存储存储块的擦除计数的存储单元和用于从存储单元获取擦除计数的控制单元，并且基于EC计算标准偏差，并且确定静态磨损的方式 调平周期根据标准偏差。 决定静态磨损均衡循环的方式的控制单元包括设置至少一个预定阈值点并判断擦除计数的标准偏差是否小于预定阈值点的步骤。 如果擦除计数的标准偏差小于预定阈值点，则静态磨损均衡循环开始第一次循环，并且移动存储有第一数量的存储块的静态数据。 如果擦除计数的标准偏差大于预定的阈值点，则开始第二个循环量并且移动存储有第二数量的存储器块的静态数据。

公开(公告)号：US20100017555A1

公开(公告)日：2010-01-21

申请号：US12320141

申请日：2009-01-21

申请人： Li-Pin Chang ,  Ming-Dar Chen ,  Chien-Ting Huang

发明人： Li-Pin Chang ,  Ming-Dar Chen ,  Chien-Ting Huang

IPC分类号： G06F12/02 ,  G06F12/00

CPC分类号： G06F12/0246 ,  G06F2212/7211

摘要： A control method of a memory storage device for writing an updated data from a host to the memory storage device is provided. The memory storage device provides storage space which is divided into a plurality of physical blocks to access the updated data. The control method includes the following steps: first, determining whether the updated data is a hot data or not; finally, storing the less updated data which is not the hot data into the physical block which has the higher erase counts according to the result of above determination.

摘要翻译： 提供了一种用于将更新的数据从主机写入存储器存储装置的存储器存储装置的控制方法。 存储器存储设备提供存储空间，其被划分为多个物理块以访问更新的数据。 该控制方法包括以下步骤：首先，确定更新的数据是否为热数据; 最后，根据上述确定的结果，将不是热数据的较少更新的数据存储到具有较高擦除次数的物理块中。

公开(公告)号：US20090307418A1

公开(公告)日：2009-12-10

申请号：US12382442

申请日：2009-03-17

申请人： Ming-Dar Chen ,  Chuan-Sheng Lin ,  Tso-Cheng Su ,  Shih-Fang Hung ,  Tzu-Wei Fang ,  Hsiang-An Hsieh

发明人： Ming-Dar Chen ,  Chuan-Sheng Lin ,  Tso-Cheng Su ,  Shih-Fang Hung ,  Tzu-Wei Fang ,  Hsiang-An Hsieh

IPC分类号： G06F12/06 ,  H03M13/09

CPC分类号： G06F12/0246 ,  G06F11/1048 ,  G06F2212/7208

摘要： The present invention discloses a control method of a multi-channel hybrid density memory storage device for access a user data. The storage device includes a plurality of low density memories (LDM) and high density memories (HDM). The steps of the method comprises: first, determining where the user data transmitted; then, using one of two error correction circuits which have different error correction capability to encode or decode the user data.

摘要翻译： 本发明公开了一种用于访问用户数据的多通道混合密度存储装置的控制方法。 存储装置包括多个低密度存储器（LDM）和高密度存储器（HDM）。 该方法的步骤包括：首先确定用户数据发送的位置; 然后，使用具有不同纠错能力的两个纠错电路中的一个对用户数据进行编码或解码。

公开(公告)号：US20090282305A1

公开(公告)日：2009-11-12

申请号：US12243472

申请日：2008-10-01

申请人： Ming-Dar Chen ,  Chuan-Sheng Lin ,  Hsiang-An Hsieh ,  Hui-Neng Chang

发明人： Ming-Dar Chen ,  Chuan-Sheng Lin ,  Hsiang-An Hsieh ,  Hui-Neng Chang

IPC分类号： G06F11/26

CPC分类号： G11C29/42 ,  G06F11/1068 ,  G11C29/44 ,  G11C2029/0405 ,  G11C2029/3602

摘要： A storage system with a data recovery function and its method reduce errors in a storage medium to a recoverable range of a general ECC function by repeating a testing and recovery procedure for one or more times to assure the accuracy of reading data and enhance the data reliability effectively. The data recovery procedure includes the steps of providing test data by a test data generator of the storage system, writing the test data into a memory block where error data is found, finding an error bit by reading the test data, reducing the error to a recoverable range of the ECC technique by the recovery procedure. If the error bit cannot be found or reduced to a recoverable range of the ECC technique within an upper limit of the number of tests, the memory block is marked as bad.

摘要翻译： 具有数据恢复功能的存储系统及其方法通过重复一次或多次的测试和恢复过程将存储介质中的错误减少到通用ECC功能的可恢复范围，以确保读取数据的准确性并提高数据可靠性 有效。 数据恢复过程包括以下步骤：由存储系统的测试数据发生器提供测试数据，将测试数据写入到发现错误数据的存储器块中，通过读取测试数据找到错误位，将错误减少到 通过恢复程序可以恢复ECC技术的范围。 如果错误位在测试次数的上限内不能被发现或缩小到ECC技术的可恢复范围，则存储块被标记为坏。

公开(公告)号：US20070258220A1

公开(公告)日：2007-11-08

申请号：US11382057

申请日：2006-05-08

申请人： Li-Pai Chen ,  Ming-Dar Chen ,  Hsiang-An Hsieh ,  Jui-Bin Hwan

发明人： Li-Pai Chen ,  Ming-Dar Chen ,  Hsiang-An Hsieh ,  Jui-Bin Hwan

IPC分类号： H05K5/00

CPC分类号： G06K19/07743 ,  G06K19/07732

摘要： A micro memory card includes a first housing having a first thickness and a first width; a first device connector formed on an end of the first housing, the first device connector conforming to a first device connection standard and allowing access to memory of the micro memory card by a device compatible with the first device connection standard; a second housing having a second thickness and a second width, the second housing being integrally joined with the first housing; and a second device connector formed on an end of the second housing at an opposite end of the micro memory card from the first device connector, the second device connector conforming to a second device connection standard and allowing access to memory of the micro memory card by a device compatible with the second device connection standard.

摘要翻译： 微存储卡包括具有第一厚度和第一宽度的第一壳体; 形成在所述第一壳体的端部上的第一装置连接器，所述第一装置连接器符合第一装置连接标准，并允许通过与所述第一装置连接标准兼容的装置访问所述微存储卡的存储器; 具有第二厚度和第二宽度的第二壳体，所述第二壳体与所述第一壳体整体连接; 以及第二设备连接器，其形成在所述第二壳体的位于所述微存储卡的与所述第一设备连接器的相对端的端部上，所述第二设备连接器符合第二设备连接标准，并且允许通过所述微存储卡的存储器访问所述微存储卡的存储器 与第二设备连接标准兼容的设备。