发明授权
- 专利标题： Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by venting the system with an inert gas
- 专利标题（中）： 通过用惰性气体排放系统来生产具有减少量的硼化合物的多晶硅的装置和方法
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申请号： US12986392申请日： 2011-01-07
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公开(公告)号： US08226920B1公开(公告)日： 2012-07-24
- 发明人: Takeshi Kamei , Mamoru Nakano
- 申请人： Takeshi Kamei , Mamoru Nakano
- 申请人地址： US AL Theodore JP Tokyo
- 专利权人： Mitsubishi Polycrystalline Silicon America Corporation (MIPSA),Mitsubishi Materials Corporation
- 当前专利权人： Mitsubishi Polycrystalline Silicon America Corporation (MIPSA),Mitsubishi Materials Corporation
- 当前专利权人地址： US AL Theodore JP Tokyo
- 代理机构： Edwards Wildman Palmer LLP
- 主分类号： C01B33/03
- IPC分类号： C01B33/03 ; C01B33/035
摘要：
The invention concern an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention feeds Ar gas in a trichlorosilane line, which connects a trichlorosilane (TCS) tank and a series of distillation units. The distillation units have a pressure transducer and a pressure independent control valve (PIC-V) positioned on a vent gas line for discharging vent gas from the distillation units. Ar gas is fed to the TCS line with higher pressure than the pressure set for opening the PIC-V. The TCS is distilled by the distillation units with continuously discharging vent gas from the distillation units.
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