利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

12 条记录 (耗时 0.015 秒)

    Rotary electric machine
    1.
    发明授权
    Rotary electric machine 失效
    旋转电机

    公开(公告)号：US08680732B2

    公开(公告)日：2014-03-25

    申请号：US13283660

    申请日：2011-10-28

    申请人： Takeshi Kamei

    发明人： Takeshi Kamei

    IPC分类号： H02K21/12

    CPC分类号： H02K1/276 ,  H02K1/2766 ,  H02K2213/03

    摘要： A rotary electric machine includes a rotor core, and a permanent magnet embedded in proximity to an outer circumferential portion of the rotor core, in which gaps for reducing irreversible demagnetization of the permanent magnet are provided on portions on an inner circumference side of the permanent magnet, the portions being of the rotor core in proximity to an inner circumferential surface of the permanent magnet.

    摘要翻译： 旋转电机包括转子芯和嵌入在转子芯的外圆周部分附近的永磁体，其中用于减少永磁体的不可逆退磁的间隙设置在永磁体的内周侧的部分上 所述转子铁芯的部分靠近所述永久磁铁的内周面。

    Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by venting the system with an inert gas
    5.
    发明授权
    Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by venting the system with an inert gas 有权
    通过用惰性气体排放系统来生产具有减少量的硼化合物的多晶硅的装置和方法

    公开(公告)号：US08226920B1

    公开(公告)日：2012-07-24

    申请号：US12986392

    申请日：2011-01-07

    申请人： Takeshi Kamei ,  Mamoru Nakano

    发明人： Takeshi Kamei ,  Mamoru Nakano

    IPC分类号： C01B33/03 ,  C01B33/035

    CPC分类号： C01B33/035 ,  B01J8/18 ,  B01J2219/00006

    摘要： The invention concern an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention feeds Ar gas in a trichlorosilane line, which connects a trichlorosilane (TCS) tank and a series of distillation units. The distillation units have a pressure transducer and a pressure independent control valve (PIC-V) positioned on a vent gas line for discharging vent gas from the distillation units. Ar gas is fed to the TCS line with higher pressure than the pressure set for opening the PIC-V. The TCS is distilled by the distillation units with continuously discharging vent gas from the distillation units.

    摘要翻译： 本发明涉及一种制造具有减少量的硼化合物的多晶硅的装置和方法。 本发明将三氯硅烷（TCS）罐和一系列蒸馏装置连接在三氯硅烷管线中的Ar气进料。 蒸馏单元具有压力传感器和压力独立控制阀（PIC-V），其位于排气管线上，用于从蒸馏单元排出排出气体。 Ar气体以比为打开PIC-V设定的压力高的压力供给TCS管路。 TCS由蒸馏单元蒸馏，从蒸馏单元连续排出排放气体。

    METHOD FOR PRODUCING TRICHLOROSILANE WITH REDUCED BORON COMPOUND IMPURITIES
    6.
    发明申请
    METHOD FOR PRODUCING TRICHLOROSILANE WITH REDUCED BORON COMPOUND IMPURITIES 审中-公开
    用减少硼硼化合物生产三氯硅烷的方法

    公开(公告)号：US20120082609A1

    公开(公告)日：2012-04-05

    申请号：US12896116

    申请日：2010-10-01

    申请人： Takeshi Kamei ,  Laura Prine ,  Takamasa Yasukawa ,  Yasuhiro Oda

    发明人： Takeshi Kamei ,  Laura Prine ,  Takamasa Yasukawa ,  Yasuhiro Oda

    IPC分类号： C01B33/107

    CPC分类号： C01B33/10763 ,  C01B35/02 ,  C01B35/026

    摘要： The present invention relates to a method for producing trichlorosilane having a reduced amount of boron compounds. The method including: (A) reacting metallurgical grade silicon with hydrogen chloride in a fluidized-bed reactor to produce a reaction gas including trichlorosilane; (B) first distilling the reaction gas, for separating first vapor fractions and first residue fractions, by setting a distillation temperature at a top of a distillation column between about a boiling point of trichlorosilane and about a boiling point of tetrachlorosilane and feeding the first vapor fractions to a second distillation column; (C) second distilling, for separating the trichlorosilane and second vapor fractions including boron compounds, by setting a distillation temperature at a top of the distillation column between about a boiling point of dichlorosilane and about a boiling point of trichlorosilane; and (D) feeding back the second vapor fractions to the fluidized-bed reactor.

    摘要翻译： 本发明涉及一种具有减少硼化合物量的三氯硅烷的制备方法。 该方法包括：（A）在流化床反应器中使冶金级硅与氯化氢反应，生成包含三氯硅烷的反应气体; （B）首先蒸馏反应气体，用于分离第一蒸气馏分和第一残余馏分，将蒸馏塔顶部的蒸馏温度设定在约三氯硅烷的沸点和约四氯硅烷的沸点之间，并将第一蒸气 馏分至第二蒸馏塔; （C）通过将蒸馏塔顶部的蒸馏温度设定在约二氯硅烷的沸点和约三氯硅烷的沸点之间，对三氯硅烷和包括硼化合物的第二蒸气馏分进行第二次蒸馏; 和（D）将第二蒸气馏分反馈到流化床反应器。

    Method of estimating initial pole position of permanent magnet brushless motor
    7.
    发明授权
    Method of estimating initial pole position of permanent magnet brushless motor 失效
    永磁式无刷电机初始磁极位置估算方法

    公开(公告)号：US06184647B2

    公开(公告)日：2001-02-06

    申请号：US09446268

    申请日：1999-12-20

    申请人： Ryuichi Oguro ,  Takeshi Kamei

    发明人： Ryuichi Oguro ,  Takeshi Kamei

    IPC分类号： H02P134

    CPC分类号： H02P6/18 ,  H02P6/20 ,  H02P6/28

    摘要： In order to estimate a magnetic pole position of a permanent magnet type brushless motor, the following steps are conducted. A given &ggr; axis and a given &dgr; axis in an advanced from the &ggr; axis by an electrical angle of 90° are set. A closed-loop electric current control system in the &ggr; axis direction is formed while forming an open-loop electric current control system in the &dgr; axis direction. It is calculated an interference current generating in the &dgr; axis direction when a current command in the &ggr; axis direction is given as a stepwise alternating current command. The &ggr; axis is finely advanced by an angle of &Dgr;&thgr; when a sign of a product of an integral value of the interference current and a value of the current command in the &ggr; axis direction is positive. Alternatively, the &ggr; axis is finely delayed by an angle of &Dgr;&thgr; when the sign is negative. Thereby, the &ggr; axis is made accord with either a d axis as a true magnetic axis or with a -d axis advanced by 180° from the true magnetic axis.

    摘要翻译： 为了估计永磁式无刷电动机的磁极位置，进行以下步骤。 给定的伽马轴和从伽马轴推进电角度为90°的给定三角轴被设置。 在沿三角轴方向形成开环电流控制系统的同时形成伽马轴方向的闭环电流控制系统。 当以γ轴方向的电流指令作为逐步交流指令给出时，计算出沿三角轴方向产生的干扰电流。 当干涉电流的积分值和伽马轴方向的电流指令的值的乘积的符号为正时，伽马轴精确地前进一个DELTAtata的角度。 或者，当符号为负时，伽马轴被精确地延迟DELTAθ的角度。 因此，γ轴与d轴作为真磁轴或与从真磁轴推进180°的-d轴一致。

    Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by venting the system with an inert gas
    8.
    发明授权
    Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by venting the system with an inert gas 有权
    通过用惰性气体排放系统来生产具有减少量的硼化合物的多晶硅的装置和方法

    公开(公告)号：US08518352B2

    公开(公告)日：2013-08-27

    申请号：US13531672

    申请日：2012-06-25

    申请人： Takeshi Kamei ,  Mamoru Nakano

    发明人： Takeshi Kamei ,  Mamoru Nakano

    IPC分类号： B01J8/04 ,  B01J8/18

    CPC分类号： C01B33/035 ,  B01J8/18 ,  B01J2219/00006

    摘要： The invention concern an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention feeds Ar gas in a trichlorosilane line, which connects a trichlorosilane (TCS) tank and a series of distillation units. The distillation units have a pressure transducer and a pressure independent control valve (PIC-V) positioned on a vent gas line for discharging vent gas from the distillation units. Ar gas is fed to the TCS line with higher pressure than the pressure set for opening the PIC-V. The TCS is distilled by the distillation units with continuously discharging vent gas from the distillation units.

    摘要翻译： 本发明涉及一种制造具有减少量的硼化合物的多晶硅的装置和方法。 本发明将三氯硅烷（TCS）罐和一系列蒸馏装置连接在三氯硅烷管线中的Ar气进料。 蒸馏单元具有压力传感器和压力独立控制阀（PIC-V），其位于排气管线上，用于从蒸馏单元排出排出气体。 Ar气体以比为打开PIC-V设定的压力高的压力供给TCS管路。 TCS由蒸馏单元蒸馏，从蒸馏单元连续排出排放气体。

    APPARATUS AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON HAVING A REDUCED AMOUNT OF BORON COMPOUNDS BY VENTING THE SYSTEM WITH AN INERT GAS
    10.
    发明申请
    APPARATUS AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON HAVING A REDUCED AMOUNT OF BORON COMPOUNDS BY VENTING THE SYSTEM WITH AN INERT GAS 有权
    用于生产具有降低量的硼原子的多晶硅的装置和方法

    公开(公告)号：US20120177558A1

    公开(公告)日：2012-07-12

    申请号：US12986392

    申请日：2011-01-07

    申请人： Takeshi Kamei ,  Mamoru Nakano

    发明人： Takeshi Kamei ,  Mamoru Nakano

    IPC分类号： C01B33/039 ,  B01J8/18

    CPC分类号： C01B33/035 ,  B01J8/18 ,  B01J2219/00006

    摘要： The invention concern an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention feeds Ar gas in a trichlorosilane line, which connects a trichlorosilane (TCS) tank and a series of distillation units. The distillation units have a pressure transducer and a pressure independent control valve (PIC-V) positioned on a vent gas line for discharging vent gas from the distillation units. Ar gas is fed to the TCS line with higher pressure than the pressure set for opening the PIC-V. The TCS is distilled by the distillation units with continuously discharging vent gas from the distillation units.

    摘要翻译： 本发明涉及一种制造具有减少量的硼化合物的多晶硅的装置和方法。 本发明将三氯硅烷（TCS）罐和一系列蒸馏装置连接在三氯硅烷管线中的Ar气进料。 蒸馏单元具有压力传感器和压力独立控制阀（PIC-V），其位于排气管线上，用于从蒸馏单元排出排出气体。 Ar气体以比为打开PIC-V设定的压力高的压力供给TCS管路。 TCS由蒸馏单元蒸馏，从蒸馏单元连续排出排放气体。