发明授权
US08227912B2 Semiconductor device with Cu metal-base and manufacturing method thereof
失效
具有Cu金属基的半导体器件及其制造方法
- 专利标题： Semiconductor device with Cu metal-base and manufacturing method thereof
- 专利标题（中）： 具有Cu金属基的半导体器件及其制造方法
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申请号： US11664279申请日： 2004-10-10
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公开(公告)号： US08227912B2公开(公告)日： 2012-07-24
- 发明人: Tadahiro Ohmi , Akihiro Morimoto
- 申请人： Tadahiro Ohmi , Akihiro Morimoto
- 申请人地址： JP Tsukuba-Shi
- 专利权人： Foundation for Advancement of International Science
- 当前专利权人： Foundation for Advancement of International Science
- 当前专利权人地址： JP Tsukuba-Shi
- 代理机构： Foley & Lardner LLP
- 国际申请： PCT/JP2004/014894 WO 20041010
- 国际公布： WO2006/038305 WO 20060413
- 主分类号： H01L23/36
- IPC分类号： H01L23/36
摘要：
As a substrate for a semiconductor device, a metal substrate is used, and the metal substrate is composed of a metal base body made of a first metal and a connecting metal layer made of a second metal for covering the metal base body. The substrate has a structure wherein a diffusion preventing layer for preventing diffusion of the first metal is provided on the connecting metal layer.
公开/授权文献
- US20070252243A1 Semiconductor Device and Manufacturing Method Thereof 公开/授权日：2007-11-01
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