公开(公告)号：US07935385B2

公开(公告)日：2011-05-03

申请号：US10646855

申请日：2003-08-21

申请人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Nobukazu Ikeda ,  Eiji Ideta ,  Akihiro Morimoto ,  Tetsutaro Ogushi ,  Takehisa Konishi

发明人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Nobukazu Ikeda ,  Eiji Ideta ,  Akihiro Morimoto ,  Tetsutaro Ogushi ,  Takehisa Konishi

IPC分类号： B05D3/02 ,  B05D3/04 ,  C25D5/50

CPC分类号： C23C8/02 ,  C23C26/00 ,  Y10T428/24322 ,  Y10T428/24355 ,  Y10T428/31678

摘要： The object of the present invention is to form a chromium-oxide film excellent in corrosion resistance without containing an oxide film of other metal onto the optional metallic material. The chromium-oxide passivation film excellent in corrosion resistance without containing the oxide film of other metal can be formed inexpensively and in a short time, and a fluid supplying system for supplying fluid hard in corrosivity in safety is able to be provided. This invention comprises a step of forming the passivation film consisting of a chromium oxide by giving heat treatment in an oxidizing atmosphere after coating chromium on metallic material of which surface roughness (Ra) of a coat surface is not more than 1.5 μm

摘要翻译： 本发明的目的是在不含任何金属材料的其它金属的氧化物膜的情况下，形成耐腐蚀性优异的氧化铬膜。 能够廉价且短时间地形成不含有其他金属的氧化物膜的耐腐蚀性优异的氧化铬钝化膜，能够提供安全的腐蚀性难以供给流体的流体供给系统。 本发明包括以下步骤：在涂覆表面的粗糙度（Ra）不大于1.5μm的金属材料上涂覆铬后，在氧化气氛中进行热处理，形成由氧化铬组成的钝化膜

公开(公告)号：US07673649B2

公开(公告)日：2010-03-09

申请号：US10597303

申请日：2005-01-13

申请人： Tadahiro Ohmi ,  Yukio Minami ,  Kenji Tubota ,  Tsutomu Shinohara ,  Michio Yamaji ,  Nobukazu Ikeda ,  Akihiro Morimoto ,  Koji Kawada ,  Toshio Nariai

发明人： Tadahiro Ohmi ,  Yukio Minami ,  Kenji Tubota ,  Tsutomu Shinohara ,  Michio Yamaji ,  Nobukazu Ikeda ,  Akihiro Morimoto ,  Koji Kawada ,  Toshio Nariai

IPC分类号： B65D81/20

CPC分类号： F16K51/02 ,  Y10T137/6606 ,  Y10T137/7043 ,  Y10T137/7062

摘要： The present invention provides a vacuum thermal insulating valve that may be used at high temperature in gas supply systems or gas exhaust systems, and also may be made substantially small and compact in size owing to its excellent thermal insulating performance. With a vacuum thermal insulating valve comprising a valve equipped with a valve body and an actuator, and a vacuum thermal insulating box that houses the valve, the afore-mentioned vacuum thermal insulating box S is formed by a square-shaped lower vacuum jacket S5 having a cylinder-shaped vacuum thermal insulating pipe receiving part J on a side and with its upper face made open, and the square-shaped upper vacuum jackets S4, which is hermetically fitted to the lower vacuum jacket S5 and with its lower face made open.

摘要翻译： 本发明提供一种真空绝热阀，其可以在气体供给系统或排气系统中在高温下使用，并且由于其绝热性能优异，也可以制成大小小型的真空绝热阀。 使用包括阀体和致动器的阀的真空隔热阀和容纳阀的真空保温箱，上述真空保温箱S由方形的下部真空夹套S5形成， 圆筒形真空绝热管接收部分J的侧面并且其上表面打开，方形的上部真空夹套S4气密地装配到下部真空套筒S5上并且其下表面打开。

公开(公告)号：US07501764B2

公开(公告)日：2009-03-10

申请号：US10546182

申请日：2004-02-18

申请人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Akihiro Morimoto

发明人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Akihiro Morimoto

IPC分类号： H01J61/04 ,  H01J61/06

CPC分类号： H01J61/0677 ,  H01J61/0672 ,  H01J61/16

摘要： A cold cathode fluorescent tube where an electron emitting electrode is sealed in shows much deterioration in the luminance with time, thereby being not adequate for a long time use. The electrode emitting electrode is formed in such a shape that an electric field is not locally concentrated. By mixing a material of high heat conductivity, such as tungsten, as the material for the electron emitting electrode or using helium of high heat conductivity as the sealing gas, a long life of the cold cathode fluorescent tube is achieved.

摘要翻译： 其中电子发射电极被密封的冷阴极荧光管显示出随时间的亮度的很大的劣化，从而不能长时间使用。 电极发射电极形成为电场不局部集中的形状。 通过将诸如钨的高导热性材料作为电子发射电极的材料或使用具有高导热性的氦气作为密封气体，可以实现冷阴极荧光管的长寿命。

公开(公告)号：US07472887B2

公开(公告)日：2009-01-06

申请号：US10545672

申请日：2004-02-09

申请人： Tadahiro Ohmi ,  Nobukazu Ikeda ,  Michio Yamaji ,  Masafumi Kitano ,  Akihiro Morimoto

发明人： Tadahiro Ohmi ,  Nobukazu Ikeda ,  Michio Yamaji ,  Masafumi Kitano ,  Akihiro Morimoto

IPC分类号： F16K7/17

CPC分类号： F16K7/14 ,  F16K27/003 ,  F16K51/02

摘要： The present invention provides a valve which makes it possible to reduce the diameter of the vacuum exhaustion pipings for making the facility for the vacuum exhaustion system small, as a result lowering the costs, and making the vacuum exhaustion time short, and also which can prevent the corrosions, cloggings, and seal leakages inside the piping system caused by the accumulation of substances produced by the decomposition of the gas.Specifically, the aluminum passivation is applied on the piping parts, i.e. the valve and others, used in the vacuum exhaustion system to inhibit the gas decomposition caused by the temperature rise at the time of the baking so that components for the reduction in the diameter size in the vacuum exhaustion system are provided. The corrosions, cloggings and seat leakages caused by the gas decomposition are prevented.

摘要翻译： 本发明提供一种阀，其能够减小用于真空排气系统的设备的真空排气管的直径，结果是降低成本，并且使真空耗尽时间短，并且还可以防止 由气体分解产生的物质的积聚引起的管道系统内的腐蚀，堵塞和密封泄漏。 具体地说，在真空耗尽系统中使用的管道部件即阀门等上施加铝钝化，以抑制由烘烤时的温度升高引起的气体分解，从而减小直径尺寸的部件 在真空耗尽系统中提供。 防止气体分解引起的腐蚀，堵塞和座椅泄漏。

公开(公告)号：US20080302406A1

公开(公告)日：2008-12-11

申请号：US11631285

申请日：2005-06-24

申请人： Tadahiro Ohmi ,  Akihiro Morimoto ,  Kiwamu Takehisa

发明人： Tadahiro Ohmi ,  Akihiro Morimoto ,  Kiwamu Takehisa

IPC分类号： H01L31/042

CPC分类号： H01L31/055 ,  H01L31/02168 ,  Y02E10/52

摘要： Generally, solar cell panels are black, being inferior in design. An object of the invention is to provide a transparent plate which develops color without lowering power generation efficiency; and a solar cell panel which uses such transparent plate. A solar cell panel according to the invention has a construction such that the solar cell is covered by a transparent plate which is characterized by absorbing infrared light and emitting visible light. Since the transparent plate develops color by using infrared light which does not contribute to power generation, there is obtained a solar cell panel which is superior in the viewpoint of decoration without lowering the power generation efficiency of solar cells.

摘要翻译： 一般来说，太阳能电池板是黑色的，设计差。 本发明的目的是提供一种在不降低发电效率的情况下显色的透明板; 以及使用这种透明板的太阳能电池板。 根据本发明的太阳能电池板具有太阳能电池被透明板覆盖的结构，其特征在于吸收红外光并发出可见光。 由于通过使用对发电无贡献的红外线使透明板显色，所以获得了在不降低太阳能电池的发电效率的情况下在装饰的观点上优越的太阳能电池面板。

公开(公告)号：US20080003441A1

公开(公告)日：2008-01-03

申请号：US11878976

申请日：2007-07-30

申请人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Nobukazu Ikeda ,  Eiji Ideta ,  Akihiro Morimoto ,  Tetsutaro Ogushi ,  Takehisa Konishi

发明人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Nobukazu Ikeda ,  Eiji Ideta ,  Akihiro Morimoto ,  Tetsutaro Ogushi ,  Takehisa Konishi

IPC分类号： B32B15/04

CPC分类号： C23C8/02 ,  C23C26/00 ,  Y10T428/24322 ,  Y10T428/24355 ,  Y10T428/31678

摘要： The object of the present invention is to form a chromium-oxide film excellent in corrosion resistance without containing an oxide film of other metal onto the optional metallic material. The chromium-oxide passivation film excellent in corrosion resistance without containing the oxide film of other metal can be formed inexpensively and in a short time, and a fluid supplying system for supplying fluid hard in corrosivity in safety is able to be provided. This invention comprises a step of forming the passivation film consisting of a chromium oxide by giving heat treatment in an oxidizing atmosphere after coating chromium on metallic material of which surface roughness (Ra) of a coat surface is not more than 1.5 μm

摘要翻译： 本发明的目的是在不含任何金属材料的其它金属的氧化物膜的情况下，形成耐腐蚀性优异的氧化铬膜。 能够廉价且短时间地形成不含有其他金属的氧化物膜的耐腐蚀性优异的氧化铬钝化膜，能够提供安全的腐蚀性难以供给流体的流体供给系统。 本发明包括以下步骤：在涂覆表面的表面粗糙度（Ra）不大于1.5μm的金属材料上涂覆铬之后，在氧化气氛中进行热处理，形成由氧化铬组成的钝化膜

公开(公告)号：US20070210715A1

公开(公告)日：2007-09-13

申请号：US10594896

申请日：2005-03-31

申请人： Tadahiro Ohmi ,  Akihiro Morimoto

发明人： Tadahiro Ohmi ,  Akihiro Morimoto

IPC分类号： H01J7/02 ,  H01J9/38 ,  H01J9/46

CPC分类号： H01J9/395 ,  H01J7/02 ,  H01J9/38 ,  H01J9/385 ,  H01J17/20 ,  H01J21/00 ,  H01J37/18 ,  H01J61/20 ,  H01J61/24

摘要： With respect to a vacuum tube having a reduced pressure vessel containing an electric discharge gas sealed therein, problems such as the lowering of discharge efficiency owing to an organic material, moisture or oxygen remaining in the reduced pressure vessel have taken place conventionally. It has been now found that the selection of the number of water molecules, the number of molecules of an organic gas and the number of oxygen molecules remaining in the reduced pressure vessel, in a relation with the number of molecules of a gas contributing the electric discharge allows the reduction of the adverse effect by the above-mentioned remaining gas. Specifically, the selection of the number of molecules of the above electric discharge gas being about ten times that of the above-mentioned remaining gas or more can reduce the adverse effect by the above-mentioned remaining gas.

摘要翻译： 对于具有密封在其中的放电气体的减压容器的真空管，常规地发生诸如由于有机材料引起的排出效率降低，残留在减压容器中的水分或氧气的问题。 现在已经发现，选择水分子的数量，有机气体的分子数和残留在减压容器中的氧分子的数量与导致电气的气体的分子数的关系 放电允许通过上述剩余气体减少不利影响。 具体而言，选择上述放电气体的分子数为上述剩余气体的10倍以上的分子数量，可以减少上述剩余气体的不利影响。

公开(公告)号：US20070096289A1

公开(公告)日：2007-05-03

申请号：US11529319

申请日：2006-09-29

申请人： Ryo Enomoto ,  Tadahiro Ohmi ,  Akihiro Morimoto

发明人： Ryo Enomoto ,  Tadahiro Ohmi ,  Akihiro Morimoto

IPC分类号： H01L23/24 ,  H01L23/12 ,  H01L23/22

CPC分类号： H01L23/5389 ,  H01L23/49827 ,  H01L24/24 ,  H01L24/82 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/2402 ,  H01L2224/24227 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/8203 ,  H01L2224/82047 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/1058 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15331 ,  H01L2924/30107 ,  H01L2924/3511 ,  H01L2224/82

摘要： For the purpose of providing a semiconductor element built-in type multilayered circuit board in which a semiconductor element is closely joined to a recess of an insulating substrate to effectively disperse heat generated from the semiconductor element through the insulating substrate at a working temperature region of the semiconductor element circuit board, to surely conduct an electrical connection of an electronic part such as semiconductor element or the like in a short wiring and to enable the high density mounting of semiconductor elements, miniaturization and increase of working speed, there is proposed a semiconductor element built-in type multilayered circuit board formed by laminating a plurality of semiconductor element built-in type boards each comprising an insulating substrate and a semiconductor element accommodated in a recess formed therein, characterized in that a difference between a linear expansion coefficient of the insulating substrate and a linear expansion coefficient of the semiconductor element in a temperature zone of 20-300° C. is less than 1×10−5/K.

摘要翻译： 为了提供半导体元件内置型多层电路板，其中半导体元件紧密接合到绝缘基板的凹部，以在半导体元件的工作温度区域有效地分散通过绝缘基板从半导体元件产生的热量 半导体元件电路板，可靠地将诸如半导体元件等的电子部件的电连接在短布线中，并且能够实现半导体元件的高密度安装，小型化和提高工作速度，提出了半导体元件 内置型多层电路板，其通过层叠多个半导体元件内置型板而形成，所述多个半导体元件内置型基板包括绝缘基板和容纳在其中形成的凹部中的半导体元件，其特征在于，所述绝缘基板的线膨胀系数 和线性膨胀公司 温度范围为20-300℃的半导体元件的效率小于1×10 -5 / K。

公开(公告)号：US07103990B2

公开(公告)日：2006-09-12

申请号：US10498800

申请日：2003-09-11

申请人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Takumi Fujita ,  Yukio Minami ,  Nobukazu Ikeda ,  Akihiro Morimoto ,  Koji Kawada

发明人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Takumi Fujita ,  Yukio Minami ,  Nobukazu Ikeda ,  Akihiro Morimoto ,  Koji Kawada

IPC分类号： F26B5/08

CPC分类号： H01L21/67034 ,  H01L21/02052

摘要： It is an object of the present invention to provide a rotation type silicon wafer cleaning device to further raise the stability of a silicon wafer by providing a better hydrogen termination on the silicon wafer after completion of chemical and pure water cleaning treatments.According to the present invention, a rotation type silicon wafer cleaning device has a silicon wafer support/rotation driving mechanism inside the case body for cleaning the silicon wafer at the post chemical cleaning with pure water, drying and hydrogen termination treatments on the outer surface of a silicon wafer is performed by means of installing a silicon wafer drying device comprising a gas supply panel attached to a case body to supply a mixed gas of the hydrogen gas and inactive gas containing a hydrogen gas of more than 0.05%, a mixed gas supply pipe coupled to a gas mixer of the afore-mentioned gas supply panel at one end, a mixed gas heating device to heat the mixed gas in the afore-mentioned gas supply pipe, and a hydrogen radical formation apparatus equipped with a platinum coating film to form hydrogen radical at the gas contacting part where to a high temperature gas heated with the afore-mentioned mixed gas heating device touches, thus to gush out the mixed gas containing hydrogen radical formed with the afore-mentioned radical formation apparatus onto the rotating silicon wafer after cleaning is completed.

摘要翻译： 本发明的目的是提供一种旋转型硅晶片清洁装置，以在化学和纯净水清洗处理完成之后通过在硅晶片上提供更好的氢终止来进一步提高硅晶片的稳定性。 根据本发明，旋转型硅晶片清洗装置在壳体内部具有硅晶片支撑/旋转驱动机构，用于在后期化学清洗时用纯水清洗硅晶片，在外表面上进行干燥和氢终止处理 通过安装硅晶片干燥装置来执行硅晶片，所述硅晶片干燥装置包括附接到壳体的气体供应板，以供应氢气和含有大于0.05％的氢气的惰性气体的混合气体，混合气体供应 一端连接上述气体供给面板的气体混合器的管道，将上述气体供给管内的混合气体加热的混合气体加热装置以及配备有铂镀膜的氢自由基形成装置， 在与上述混合气体加热装置加热的高温气体接触的气体接触部分处形成氢自由基，从而喷出混合气体 在完成清洁之后，将上述自由基形成装置形成的氢基团固定在旋转的硅晶片上。

公开(公告)号：US06273477B1

公开(公告)日：2001-08-14

申请号：US09253942

申请日：1999-02-22

申请人： Tadahiro Ohmi ,  Michio Yamaji ,  Tsutomu Shinohara ,  Nobukazu Ikeda ,  Akihiro Morimoto

发明人： Tadahiro Ohmi ,  Michio Yamaji ,  Tsutomu Shinohara ,  Nobukazu Ikeda ,  Akihiro Morimoto

IPC分类号： F16L2500

CPC分类号： C22C38/44 ,  F16L19/0212 ,  Y10S285/917

摘要： A pipe joint comprises a pair of tubular joint members, an annular gasket interposed between opposed end faces of the two joint members, and threaded means for joining the two joint members. Each of the joint members is prepared from a stainless steel having a surface with a Vickers hardness of at least 300. The gasket is prepared from a stainless steel comprising, in ratio by weight, 12.90 to 15.00% of Ni, 16.50 to 18.00% of Cr, 2.00 to 3.00% of Mo, up to 0.02% of C, up 0.30% of Si, up to 0.40% of Mn, up to 0.03% of P, up to 0.003% of S, up to 0.25% of Cu and up to 0.01% of Al, the gasket having a surface with a Vickers hardness of 90 to 160.

摘要翻译： 管接头包括一对管状接头构件，插入在两个接头构件的相对端面之间的环形垫圈，以及用于接合两个接头构件的螺纹装置。 每个接合构件由具有维氏硬度至少为300的表面的不锈钢制成。垫圈由不锈钢制成，其包含按重量计12.10％至15.00％的Ni，16.50至18.00％的 Cr，2.00〜3.00％的Mo，高达0.02％的C，0.30％的Si，至多0.40％的Mn，至多0.03％的P，至多0.003％的S，至多0.25的Cu和 高达0.01％的Al，垫圈具有维氏硬度为90至160的表面。