发明授权
- 专利标题: Electromechanical device configured to minimize stress-related deformation and methods for fabricating same
- 专利标题(中): 配置为最小化应力相关变形的机电装置及其制造方法
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申请号: US12825214申请日: 2010-06-28
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公开(公告)号: US08229253B2公开(公告)日: 2012-07-24
- 发明人: Fan Zhong , Lior Kogut
- 申请人: Fan Zhong , Lior Kogut
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM MEMS Technologies, Inc.
- 当前专利权人: QUALCOMM MEMS Technologies, Inc.
- 当前专利权人地址: US CA San Diego
- 代理机构: Knobbe Martens Olson & Bear LLP
- 主分类号: G02F1/01
- IPC分类号: G02F1/01
摘要:
Embodiments of MEMS devices include a movable layer supported by overlying support structures, and may also include underlying support structures. In one embodiment, the residual stresses within the overlying support structures and the movable layer are substantially equal. In another embodiment, the residual stresses within the overlying support structures and the underlying support structures are substantially equal. In certain embodiments, substantially equal residual stresses are be obtained through the use of layers made from the same materials having the same thicknesses. In further embodiments, substantially equal residual stresses are obtained through the use of support structures and/or movable layers which are mirror images of one another.