One preferred method for use in making a device structure with use of the resist channel shrinking solution includes the steps of forming a first pedestal portion within a channel of a patterned resist; applying a resist channel shrinking solution comprising a resist channel shrinking film and corrosion inhibitors within the channel of the patterned resist; baking the resist channel shrinking solution over the patterned resist to thereby reduce a width of the channel of the patterned resist; removing the resist channel shrinking solution; and forming a second pedestal portion within the reduced-width channel of the patterned resist. Advantageously, the oxide layer and the corrosion inhibitors of the resist channel shrinking solution reduce corrosion in the pedestal during the act of baking the resist channel shrinking solution.