Invention Grant
- Patent Title: Process for producing air gaps in microstructures
- Patent Title (中): 在微结构中产生气隙的方法
-
Application No.: US12353872Application Date: 2009-01-14
-
Publication No.: US08231797B2Publication Date: 2012-07-31
- Inventor: Vincent Jousseaume , Aziz Zenasni
- Applicant: Vincent Jousseaume , Aziz Zenasni
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Brinks Hofer Gilson & Lione
- Priority: FR0850249 20080116
- Main IPC: B31D3/00
- IPC: B31D3/00 ; B32B3/10 ; H01L21/44 ; C03C15/00

Abstract:
A process for producing at least one air gap in a microstructure, which includes the supply of a microstructure comprising at least one gap filled with a sacrificial material, this gap being limited over at least part of its surface by an impermeable membrane but which may be rendered permeable by the action of a chemical etchant, this etchant also being capable of degrading the sacrificial material and the contacting of the microstructure with said chemical etchant in order to make the membrane permeable and degrade the sacrificial material, and the removal of the chemical etchant from the microstructure and in which the chemical etchant is a fluid containing hydrofluoric acid and/or ammonium fluoride. Applications include microelectronics and micro-technology.
Public/Granted literature
- US20090178999A1 PROCESS FOR PRODUCING AIR GAPS IN MICROSTRUCTURES Public/Granted day:2009-07-16
Information query