Invention Grant
- Patent Title: Method for fabricating light emitting diode chip
- Patent Title (中): 制造发光二极管芯片的方法
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Application No.: US13207439Application Date: 2011-08-11
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Publication No.: US08232122B2Publication Date: 2012-07-31
- Inventor: Po-Min Tu , Shih-Cheng Huang
- Applicant: Po-Min Tu , Shih-Cheng Huang
- Applicant Address: TW Hsinchu Hsien
- Assignee: Advanced Optoelectronic Technology, Inc.
- Current Assignee: Advanced Optoelectronic Technology, Inc.
- Current Assignee Address: TW Hsinchu Hsien
- Agency: Altis Law Group, Inc.
- Priority: CN201010611477.5 20101229
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method for fabricating an LED chip is provided. Firstly, a SiO2 pattern layer is formed on a top surface of a substrate. Then, lighting structures are grown on a portion of the top surface of substrate without the SiO2 pattern layer thereon. Thereafter, the SiO2 pattern layer is removed by wet etching to form spaces between bottoms of the lighting structures and substrate. An etching solution is used to permeate into the spaces and etch the lighting structures from the bottoms thereof, whereby the lighting structures each with a trapezoid shape is formed. Sidewalls of each of the lighting structures are inclined inwardly along a top-to-bottom direction.
Public/Granted literature
- US20120171791A1 METHOD FOR FABRICATING LIGHT EMITTING DIODE CHIP Public/Granted day:2012-07-05
Information query
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