发明授权
US08234774B2 Method for fabricating a microelectromechanical system (MEMS) resonator
有权
用于制造微机电系统(MEMS)谐振器的方法
- 专利标题: Method for fabricating a microelectromechanical system (MEMS) resonator
- 专利标题(中): 用于制造微机电系统(MEMS)谐振器的方法
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申请号: US11963709申请日: 2007-12-21
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公开(公告)号: US08234774B2公开(公告)日: 2012-08-07
- 发明人: Paul Merritt Hagelin , Charles Grosjean
- 申请人: Paul Merritt Hagelin , Charles Grosjean
- 申请人地址: US CA Sunnyvale
- 专利权人: SiTime Corporation
- 当前专利权人: SiTime Corporation
- 当前专利权人地址: US CA Sunnyvale
- 代理商 Neil A. Steinberg
- 主分类号: H04R31/00
- IPC分类号: H04R31/00
摘要:
One embodiment of the present invention sets forth a method for decreasing a temperature coefficient of frequency (TCF) of a MEMS resonator. The method comprises lithographically defining slots in the MEMS resonator beams and filling the slots with oxide. By growing oxide within the slots, the amount of oxide growth on the outside surfaces of the MEMS resonator may be reduced. Furthermore, by situating the slots in the areas of large flexural stresses, the contribution of the embedded oxide to the overall TCF of the MEMS resonator is increased, and the total amount of oxide needed to decrease the overall TCF of the MEMS resonator to a particular target value is reduced. As a result, the TCF of the MEMS resonator may be reduced in a manner that is more effective relative to prior art approaches.
公开/授权文献
- US20090158566A1 Temperature Stable MEMS Resonator 公开/授权日:2009-06-25
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