利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

19 条记录 (耗时 0.016 秒)

    Substrate contact for a MEMS device
    2.
    发明申请
    Substrate contact for a MEMS device 审中-公开
    MEMS器件的基板接触

    公开(公告)号：US20080116534A1

    公开(公告)日：2008-05-22

    申请号：US11941053

    申请日：2007-11-15

    申请人： Charles Grosjean ,  Paul Merritt Hagelin ,  Nicholas Ian Buchan

    发明人： Charles Grosjean ,  Paul Merritt Hagelin ,  Nicholas Ian Buchan

    IPC分类号： H01L29/84

    CPC分类号： B81C1/00301 ,  B81B2207/092

    摘要： One embodiment of the present invention sets forth a substrate contact for a MEMS device die, where the substrate contact is formed through an electrically insulative layer in the device die that is positioned between a handle wafer layer and a MEMS device layer formed on the handle wafer layer. The substrate contact serves as a path to ground for the MEMS handle wafer layer and is formed during the fabrication process of the MEMS device. One advantage of the disclosed invention is that a robust, low-impedance path to ground is provided for the MEMS handle wafer layer, with minimal impact on the process of fabricating a MEMS device.

    摘要翻译： 本发明的一个实施例提出了用于MEMS器件裸片的衬底接触，其中衬底接触通过器件管芯中的电绝缘层形成，该电绝缘层位于处理晶片层和形成在处理晶片上的MEMS器件层之间 层。 衬底接触件用作MEMS处理晶片层的接地路径，并且在MEMS器件的制造过程期间形成。 所公开的发明的一个优点是为MEMS处理晶片层提供了坚固的，低阻抗的接地路径，对制造MEMS器件的过程的影响最小。

    Substrate contact for a MEMS device
    3.
    发明申请
    Substrate contact for a MEMS device 审中-公开

    公开(公告)号：US20080119003A1

    公开(公告)日：2008-05-22

    申请号：US11941057

    申请日：2007-11-15

    申请人： Charles Grosjean ,  Paul Merritt Hagelin ,  Nicholas Ian Buchan

    发明人： Charles Grosjean ,  Paul Merritt Hagelin ,  Nicholas Ian Buchan

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00095

    摘要： One embodiment of the present invention sets forth a substrate contact for a MEMS device die, where the substrate contact is formed through an electrically insulative layer in the device die that is positioned between a handle wafer layer and a MEMS device layer formed on the handle wafer layer. The substrate contact serves as a path to ground for the MEMS handle wafer layer and is formed during the fabrication process of the MEMS device. One advantage of the disclosed invention is that a robust, low-impedance path to ground is provided for the MEMS handle wafer layer, with minimal impact on the process of fabricating a MEMS device.

    SUBSTRATE CONTACT FOR A MEMS DEVICE
    5.
    发明申请
    SUBSTRATE CONTACT FOR A MEMS DEVICE 审中-公开
    MEMS器件的基板接触

    公开(公告)号：US20080119001A1

    公开(公告)日：2008-05-22

    申请号：US11941045

    申请日：2007-11-15

    申请人： Charles Grosjean ,  Paul Merritt Hagelin ,  Nicholas Ian Buchan

    发明人： Charles Grosjean ,  Paul Merritt Hagelin ,  Nicholas Ian Buchan

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00095

    摘要： One embodiment of the present invention sets forth a substrate contact for a MEMS device die, where the substrate contact is formed through an electrically insulative layer in the device die that is positioned between a handle wafer layer and a MEMS device layer formed on the handle wafer layer. The substrate contact serves as a path to ground for the MEMS handle wafer layer and is formed during the fabrication process of the MEMS device. One advantage of the disclosed invention is that a robust, low-impedance path to ground is provided for the MEMS handle wafer layer, with minimal impact on the process of fabricating a MEMS device.

    摘要翻译： 本发明的一个实施例提出了用于MEMS器件裸片的衬底接触，其中衬底接触通过器件管芯中的电绝缘层形成，该电绝缘层位于处理晶片层和形成在处理晶片上的MEMS器件层之间 层。 衬底接触件用作MEMS处理晶片层的接地路径，并且在MEMS器件的制造过程期间形成。 所公开的发明的一个优点是为MEMS处理晶片层提供了坚固的，低阻抗的接地路径，对制造MEMS器件的过程的影响最小。

    Temperature Stable MEMS Resonator
    7.
    发明申请
    Temperature Stable MEMS Resonator 审中-公开

    公开(公告)号：US20090160581A1

    公开(公告)日：2009-06-25

    申请号：US11963715

    申请日：2007-12-21

    申请人： Paul Merritt Hagelin ,  Charles Grosjean

    发明人： Paul Merritt Hagelin ,  Charles Grosjean

    IPC分类号： H03H9/24

    CPC分类号： H03H3/0076 ,  H03H9/2468

    摘要： One embodiment of the present invention sets forth a method for decreasing a temperature coefficient of frequency (TCF) of a MEMS resonator. The method comprises lithographically defining slots in the MEMS resonator beams and filling the slots with oxide. By growing oxide within the slots, the amount of oxide growth on the outside surfaces of the MEMS resonator may be reduced. Furthermore, by situating the slots in the areas of large flexural stresses, the contribution of the embedded oxide to the overall TCF of the MEMS resonator is increased, and the total amount of oxide needed to decrease the overall TCF of the MEMS resonator to a particular target value is reduced. As a result, the TCF of the MEMS resonator may be reduced in a manner that is more effective relative to prior art approaches.

    Substrate contact for a MEMS device
    9.
    发明申请
    Substrate contact for a MEMS device 审中-公开

    公开(公告)号：US20080119002A1

    公开(公告)日：2008-05-22

    申请号：US11941056

    申请日：2007-11-15

    申请人： Charles Grosjean ,  Paul Merritt Hagelin ,  Nicholas Ian Buchan

    发明人： Charles Grosjean ,  Paul Merritt Hagelin ,  Nicholas Ian Buchan

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00095

    摘要： One embodiment of the present invention sets forth a substrate contact for a MEMS device die, where the substrate contact is formed through an electrically insulative layer in the device die that is positioned between a handle wafer layer and a MEMS device layer formed on the handle wafer layer. The substrate contact serves as a path to ground for the MEMS handle wafer layer and is formed during the fabrication process of the MEMS device. One advantage of the disclosed invention is that a robust, low-impedance path to ground is provided for the MEMS handle wafer layer, with minimal impact on the process of fabricating a MEMS device.