发明授权
US08236653B2 Configuration and method to form MOSFET devices with low resistance silicide gate and mesa contact regions
有权
用于形成具有低电阻硅化物栅极和台面接触区域的MOSFET器件的配置和方法
- 专利标题： Configuration and method to form MOSFET devices with low resistance silicide gate and mesa contact regions
- 专利标题（中）： 用于形成具有低电阻硅化物栅极和台面接触区域的MOSFET器件的配置和方法
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申请号： US13361950申请日： 2012-01-31
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公开(公告)号： US08236653B2公开(公告)日： 2012-08-07
- 发明人: Yongzhong Hu , Sung-Shan Tai
- 申请人： Yongzhong Hu , Sung-Shan Tai
- 申请人地址： BM
- 专利权人： Alpha & Omega Semiconductor, LTD
- 当前专利权人： Alpha & Omega Semiconductor, LTD
- 当前专利权人地址： BM
- 代理商 Bo-In Lin
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A novel integration scheme for forming power MOSFET, particularly forming salicided layers for both gate contact regions and mesa contact regions, as well as using multiple energy contact implants through the salicided layer to form conductive body contacts which short to the source region by the salicided layers.
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