发明授权
US08237170B2 Schottky diamond semiconductor device and manufacturing method for a Schottky electrode for diamond semiconductor device
有权
肖特基金刚石半导体器件及用于金刚石半导体器件的肖特基电极的制造方法
- 专利标题： Schottky diamond semiconductor device and manufacturing method for a Schottky electrode for diamond semiconductor device
- 专利标题（中）： 肖特基金刚石半导体器件及用于金刚石半导体器件的肖特基电极的制造方法
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申请号： US12597578申请日： 2008-04-14
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公开(公告)号： US08237170B2公开(公告)日： 2012-08-07
- 发明人: Kazuhiro Ikeda , Hitoshi Umezawa , Shinichi Shikata
- 申请人： Kazuhiro Ikeda , Hitoshi Umezawa , Shinichi Shikata
- 申请人地址： JP
- 专利权人： National Institute of Advanced Industrial Science and Technology
- 当前专利权人： National Institute of Advanced Industrial Science and Technology
- 当前专利权人地址： JP
- 代理机构： Ostrolenk Faber LLP
- 优先权： JP2007-117815 20070427; JP2007-117823 20070427
- 国际申请： PCT/JP2008/057283 WO 20080414
- 国际公布： WO2008/136259 WO 20081113
- 主分类号： H01L29/15
- IPC分类号： H01L29/15
摘要：
To provide a Schottky electrode in a diamond semiconductor, which has a good adhesion properties to diamonds, has a contacting surface which does not become peeled due to an irregularity in an external mechanical pressure, does not cause a reduction in yield in a diode forming process and does not cause deterioration in current-voltage characteristics, and a method of manufacturing the Schottky electrode.A Schottky electrode which includes: scattered island-form pattern Pt-group alloy thin films which are formed on a diamond surface formed on a substrate, in which the Pt-group alloy includes 50 to 99.9 mass % of Pt and 0.1 to 50 mass % of Ru and/or Ir, or which includes electrodes in a scattered island pattern, including: scattered island-form pattern metal thin films which are formed on a diamond surface formed on a substrate and include one selected from Pt and Pd; and metal thin films which include one selected from Ru, Ir and Rh and are provided on all of the metal thin films which include one selected from Pt and Pd, and a method of manufacturing the Schottky electrode.
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