发明授权
- 专利标题: Lateral transient voltage suppressor for low-voltage applications
- 专利标题(中): 用于低压应用的侧向瞬态电压抑制器
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申请号: US12837128申请日: 2010-07-15
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公开(公告)号: US08237193B2公开(公告)日: 2012-08-07
- 发明人: Che-Hao Chuang , Kun-Hsien Lin , Ryan Hsin-Chin Jiang
- 申请人: Che-Hao Chuang , Kun-Hsien Lin , Ryan Hsin-Chin Jiang
- 申请人地址: TW Taipei County
- 专利权人: Amazing Microelectronic Corp.
- 当前专利权人: Amazing Microelectronic Corp.
- 当前专利权人地址: TW Taipei County
- 代理机构: Muncy, Geissler, Olds & Lowe, PLLC
- 主分类号: H01L29/06
- IPC分类号: H01L29/06
摘要:
A lateral transient voltage suppressor for low-voltage applications. The suppressor includes an N-type heavily doped substrate and at least two clamp diode structures horizontally arranged in the N-type heavily doped substrate. Each clamp diode structure further includes a clamp well arranged in the N-type heavily doped substrate and having a first heavily doped area and a second heavily doped area. The first and second heavily doped areas respectively belong to opposite conductivity types. There is a plurality of deep isolation trenches arranged in the N-type heavily doped substrate and having a depth greater than depth of the clamp well. The deep isolation trenches can separate each clamp well. The present invention avoids the huge leakage current to be suitable for low-voltage application.
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