发明授权
- 专利标题: Isolation layer structure, method of forming the same and method of manufacturing a semiconductor device including the same
- 专利标题(中): 隔离层结构,其形成方法和制造其的半导体器件的制造方法
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申请号: US13204829申请日: 2011-08-08
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公开(公告)号: US08237240B2公开(公告)日: 2012-08-07
- 发明人: Ju-Wan Kim , Kyu-Tae Na , Min Kim , Seung-Bae Park , Il-Woo Kim , Dae-Young Kwak
- 申请人: Ju-Wan Kim , Kyu-Tae Na , Min Kim , Seung-Bae Park , Il-Woo Kim , Dae-Young Kwak
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Stanzione & Kim, LLP
- 优先权: KR10-2009-0108912 20091112
- 主分类号: H01L29/788
- IPC分类号: H01L29/788 ; H01L21/762
摘要:
An isolation layer structure includes first to fourth oxide layer patterns. The first and third oxide layer patterns are sequentially formed in a first trench defined by a first recessed top surface of a substrate and sidewalls of gate structures on the substrate in a first region. The first trench has a first width, and the first and third oxide layer patterns have no void therein. The second and fourth oxide layer patterns are sequentially formed in a second trench defined by a second recessed top surface of the substrate and sidewalls of gate structures on the substrate in a second region. The second trench has a second width larger than the first width, and the fourth oxide layer pattern has a void therein.