公开(公告)号：US08769672B2

公开(公告)日：2014-07-01

申请号：US11499209

申请日：2006-08-04

申请人： Seung Bae Park

发明人： Seung Bae Park

IPC分类号： G06F21/00

CPC分类号： G06F21/57 ,  G06F21/562 ,  G06F21/572

摘要： A method, computer program product and system for preventing code injection in an operating system. The method 300 includes a checking module 340 hooking a kernel mode OS system call 330 and a request 315 sent to the kernel mode OS system call 330 being directed to the checking module 340. The checking module 340 queries 345 a process database 350 and the checking module 340 then allows or denies the request 315 based on a response from the process database 350.

摘要翻译： 一种用于在操作系统中防止代码注入的方法，计算机程序产品和系统。 方法300包括钩住内核模式OS系统呼叫330的检查模块340和被发送到核心模式OS系统呼叫330的请求315，该核心模式OS系统呼叫330被引导到检查模块340.检查模块340查询345过程数据库350和检查 模块340然后基于来自过程数据库350的响应来允许或拒绝请求315。

公开(公告)号：US08030697B2

公开(公告)日：2011-10-04

申请号：US12489757

申请日：2009-06-23

申请人： Min-Hee Cho ,  Seung-Bae Park

发明人： Min-Hee Cho ,  Seung-Bae Park

IPC分类号： H01L27/108 ,  H01L29/94

CPC分类号： H01L27/0207 ,  H01L27/10876 ,  H01L27/10882 ,  H01L29/4236 ,  H01L29/66621 ,  Y10S257/905 ,  Y10S257/906 ,  Y10S257/907 ,  Y10S257/908

摘要： A cell structure of a semiconductor device includes an active region, having a concave portion, and an inactive region that defines the active region. A gate pattern in the active region is arranged perpendicular to the active region. A landing pad on the active region and the inactive region contacts the active region. A bit line pattern on the inactive region intersects the gate pattern perpendicularly, the bit line pattern being electrically connected to the landing pad and having a first protrusion corresponding to the concave portion of the active region.

摘要翻译： 半导体器件的单元结构包括具有凹部的有源区和限定有源区的无效区。 有源区域中的栅极图案垂直于有源区域布置。 有源区域和非活动区域上的着陆焊盘接触有源区域。 非活性区域上的位线图案垂直地与栅极图案相交，位线图形电连接到着陆焊盘并且具有对应于有源区域的凹部的第一突起。

公开(公告)号：US20090261422A1

公开(公告)日：2009-10-22

申请号：US12489757

申请日：2009-06-23

申请人： Min-Hee Cho ,  Seung-Bae Park

发明人： Min-Hee Cho ,  Seung-Bae Park

IPC分类号： H01L27/088

CPC分类号： H01L27/0207 ,  H01L27/10876 ,  H01L27/10882 ,  H01L29/4236 ,  H01L29/66621 ,  Y10S257/905 ,  Y10S257/906 ,  Y10S257/907 ,  Y10S257/908

摘要： A cell structure of a semiconductor device includes an active region, having a concave portion, and an inactive region that defines the active region. A gate pattern in the active region is arranged perpendicular to the active region. A landing pad on the active region and the inactive region contacts the active region. A bit line pattern on the inactive region intersects the gate pattern perpendicularly, the bit line pattern being electrically connected to the landing pad and having a first protrusion corresponding to the concave portion of the active region.

摘要翻译： 半导体器件的单元结构包括具有凹部的有源区和限定有源区的无效区。 有源区域中的栅极图案垂直于有源区域布置。 有源区域和非活动区域上的着陆焊盘接触有源区域。 非活性区域上的位线图案垂直地与栅极图案相交，位线图形电连接到着陆焊盘并且具有对应于有源区域的凹部的第一突起。

公开(公告)号：US07586149B2

公开(公告)日：2009-09-08

申请号：US11541756

申请日：2006-10-02

申请人： Jae-man Yoon ,  Dong-gun Park ,  Kang-yoon Lee ,  Choong-ho Lee ,  Bong-soo Kim ,  Seong-goo Kim ,  Hyeoung-won Seo ,  Seung-bae Park

发明人： Jae-man Yoon ,  Dong-gun Park ,  Kang-yoon Lee ,  Choong-ho Lee ,  Bong-soo Kim ,  Seong-goo Kim ,  Hyeoung-won Seo ,  Seung-bae Park

IPC分类号： H01L23/528 ,  H01L27/108

CPC分类号： H01L29/66666 ,  H01L21/823885 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10894 ,  H01L29/7827 ,  H01L2924/0002 ,  H01L2924/00

摘要： A circuit device including vertical transistors connected to buried bitlines and a method of manufacturing the circuit device. The circuit device includes a semiconductor substrate including a peripheral circuit region and left and right cell regions at both sides of the peripheral circuit region, bottom active regions arranged on the semiconductor substrate to be spaced apart from one another in a column direction and to extend from the peripheral circuit region alternately to the left cell region and the right cell region in a row direction, channel pillars protruding from the bottom active regions in a vertical direction and arranged to be aligned in the row direction and spaced apart from one another, gate electrodes provided with a gate dielectric layer and attached to surround side surfaces of the channel pillars, and buried bitlines extending along the bottom active regions, the bottom active regions including a bottom source/drain region.

摘要翻译： 一种包括连接到掩埋位线的垂直晶体管的电路器件和制造该电路器件的方法。 该电路装置包括半导体衬底，该半导体衬底包括外围电路区域和在外围电路区域的两侧的左侧和右侧电池区域，布置在半导体衬底上的底部有源区域在列方向上彼此间隔开并从 所述外围电路区域与所述左侧单元区域和右侧单元区域交替地排列成行方向，所述通道柱从所述底部有源区域沿垂直方向突出并且被配置为在所述行方向上彼此对准并且彼此间隔开，栅电极 设置有栅介电层并且被附接到环绕通道柱的侧表面，以及沿底部有源区延伸的掩埋位线，底部有源区包括底部源极/漏极区。

公开(公告)号：US07441737B2

公开(公告)日：2008-10-28

申请号：US10519389

申请日：2003-07-01

申请人： Seung Bae Park

发明人： Seung Bae Park

IPC分类号： E04G3/00

CPC分类号： A42B1/247 ,  A61F9/045 ,  G02C3/02 ,  Y10T16/54028 ,  Y10T16/5535 ,  Y10T403/32361 ,  Y10T403/32368 ,  Y10T403/60

摘要： Sunglass holder with built-in clip for attachment and detachment can be used on industrial sites besides sports type of hat (cap) by being conjoined with the sunglass and goggle of military helmet. When fishing at the desert where wind of sand is rampant, river or ocean, it protects the eyes from the sand and ultraviolet rays from sunlight. Towards this end, it is possible to use by conjoining hat and sunglass lens, and the product is invented to apply in diverse areas such as sunvisor, cowboy hat beret, knit wool hat, hat and hair band for jogging etc.

摘要翻译： 带有内置夹子用于附件和拆卸的太阳镜座可以用于运动型帽子（帽子）上的工业场所，与军用头盔的太阳眼镜和护目镜相结合。 在沙漠风沙，河流或海洋的沙漠上钓鱼时，可以保护眼睛免受沙尘和紫外线的侵袭。 为此，可以通过结合帽子和太阳眼镜来使用，该产品被发明适用于诸如遮阳帽，牛仔帽贝雷帽，针织羊毛帽，帽子和发带等慢跑等不同领域。

公开(公告)号：US20080046977A1

公开(公告)日：2008-02-21

申请号：US11499463

申请日：2006-08-04

申请人： Seung Bae Park

发明人： Seung Bae Park

IPC分类号： H04L9/32

CPC分类号： G06F21/57

摘要： A method, computer program product and system for obtaining notification information about the state of an operating system 330. The method 300 includes the steps of receiving, by a Direct Process Access (DPA) engine 340, a request 315 for the notification information from a requesting program 310. The notification information is obtained from a database 350 associated with the DPA engine 340 and the notification information is provided to the requesting program 310. The DPA engine 340 receives update information 325 indicative of changes in the notification information directly from the operating system 330 and causes the notification information to be updated in the database 350.

摘要翻译： 一种用于获取关于操作系统330的状态的通知信息的方法，计算机程序产品和系统。方法300包括以下步骤：通过直接过程访问（DPA）引擎340接收来自一个 从与DPA引擎340相关联的数据库350获得通知信息，并且将通知信息提供给请求程序310.DPA引擎340接收直接从操作中指示通知信息的改变的更新信息325 系统330，并且使得在数据库350中更新通知信息。

公开(公告)号：US20080040800A1

公开(公告)日：2008-02-14

申请号：US11499209

申请日：2006-08-04

申请人： Seung Bae Park

发明人： Seung Bae Park

IPC分类号： G06F12/14

CPC分类号： G06F21/57 ,  G06F21/562 ,  G06F21/572

摘要： A method, computer program product and system for preventing code injection in an operating system. The method 300 includes a checking module 340 hooking a kernel mode OS system call 330 and a request 315 sent to the kernel mode OS system call 330 being directed to the checking module 340. The checking module 340 queries 345 a process database 350 and the checking module 340 then allows or denies the request 315 based on a response from the process database 350.

摘要翻译： 一种用于在操作系统中防止代码注入的方法，计算机程序产品和系统。 方法300包括钩住内核模式OS系统呼叫330的检查模块340和被发送到内核模式OS系统呼叫330的请求315，该内核模式OS系统呼叫330被引导到检查模块340。 检查模块340查询过程数据库350并且检查模块340然后基于来自过程数据库350的响应允许或拒绝请求315。

公开(公告)号：US20060171095A1

公开(公告)日：2006-08-03

申请号：US11341835

申请日：2006-01-26

申请人： Seung-Bae Park ,  Jae-Sung Park

发明人： Seung-Bae Park ,  Jae-Sung Park

IPC分类号： H01T23/00

CPC分类号： H01L21/67167 ,  H01L21/67109 ,  H01L21/67253 ,  H01L21/67745

摘要： A method and apparatus for detecting backside particles during wafer processing is provided. The method includes forming layers on a front side of a wafer, holding a backside of the wafer on a top surface of a chuck, cooling the wafer by ejecting gas toward the backside of the wafer and detecting the presence of particles on the backside of the wafer whiles ejecting the gas toward the backside of the wafer. The presence of particles is detected if the pressure of the ejected gas is outside of a predetermined range.

公开(公告)号：US08283714B2

公开(公告)日：2012-10-09

申请号：US13085898

申请日：2011-04-13

申请人： Hyeoung-won Seo ,  Bong-soo Kim ,  Dong-gun Park ,  Kang-yoon Lee ,  Jae-man Yoon ,  Seong-goo Kim ,  Seung-bae Park

发明人： Hyeoung-won Seo ,  Bong-soo Kim ,  Dong-gun Park ,  Kang-yoon Lee ,  Jae-man Yoon ,  Seong-goo Kim ,  Seung-bae Park

IPC分类号： H01L29/94

CPC分类号： H01L27/0207 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10888 ,  H01L27/10891

摘要： Channels of two transistors are vertically formed on portions of two opposite side surfaces of one active region, and gate electrodes are vertically formed on a device isolation layer contacting the channels of the active region. A common bit line contact plug is formed in the central portions of the active region, two storage node contact plugs are formed on both sides of the bit line contact plug, and an insulating spacer is formed on a side surface of the bit line contact plug. A word line, a bit line, and a capacitor are sequentially stacked on the semiconductor substrate, like a conventional semiconductor memory device. Thus, effective space arrangement of a memory cell is possible such that a 4F2 structure is constituted, and a conventional line and contact forming process can be applied such that highly integrated semiconductor memory device is readily fabricated.

摘要翻译： 两个晶体管的沟道垂直地形成在一个有源区的两个相对的侧表面的部分上，并且栅极垂直地形成在与有源区的沟道接触的器件隔离层上。 在有源区域的中心部分形成共同的位线接触插塞，在位线接触插塞的两侧形成两个存储节点接触插塞，并且在位线接触插头的侧面上形成绝缘间隔件 。 像现有的半导体存储器件一样，在半导体衬底上顺序层叠字线，位线和电容器。 因此，存储单元的有效空间布置是可能的，使得构成4F2结构，并且可以应用常规的线和接触形成工艺，从而容易地制造高度集成的半导体存储器件。

公开(公告)号：US20120007165A1

公开(公告)日：2012-01-12

申请号：US13181281

申请日：2011-07-12

申请人： Myoung-Bum LEE ,  Jae-Hwang SIM ,  In-Sun PARK ,  Jin-Gi HONG ,  Ju-Seon GOO ,  Seung-Bae PARK ,  Seung-Yup LEE ,  Du-Heon SONG ,  Jeong-Dong CHOE ,  Seok-Won LEE

发明人： Myoung-Bum LEE ,  Jae-Hwang SIM ,  In-Sun PARK ,  Jin-Gi HONG ,  Ju-Seon GOO ,  Seung-Bae PARK ,  Seung-Yup LEE ,  Du-Heon SONG ,  Jeong-Dong CHOE ,  Seok-Won LEE

IPC分类号： H01L29/788 ,  H01L27/088

CPC分类号： H01L29/7881 ,  H01L21/764 ,  H01L27/11519 ,  H01L27/11526 ,  H01L27/11529 ,  H01L27/11565 ,  H01L27/11573 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42324 ,  H01L29/4234 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/792

摘要： A semiconductor device includes a substrate, a plurality of gate structures, a first insulating interlayer pattern, and a second insulation layer pattern. The substrate has an active region and a field region, each of the active region and the field region extends in a first direction, and the active region and the field region are alternately and repeatedly arranged in a second direction substantially perpendicular to the first direction. The gate structures are spaced apart from each other in the first direction, each of the gate structures extends in the second direction. The first insulation layer pattern is formed on a portion of a sidewall of each gate structure. The second insulation layer pattern covers the gate structures and the first insulation layer pattern, and has an air tunnel between the gate structures, the air tunnel extending in the second direction.

摘要翻译： 半导体器件包括衬底，多个栅极结构，第一绝缘层间图案和第二绝缘层图案。 基板具有有源区域和场区域，有源区域和场区域中的每一个沿着第一方向延伸，并且有源区域和场区域在基本上垂直于第一方向的第二方向上交替地和重复地布置。 栅极结构在第一方向上彼此间隔开，每个栅极结构沿第二方向延伸。 第一绝缘层图案形成在每个栅极结构的侧壁的一部分上。 第二绝缘层图案覆盖栅极结构和第一绝缘层图案，并且在栅极结构之间具有沿第二方向延伸的空气通道的空气通道。