发明授权
- 专利标题： Semiconductor device, through hole having expansion portion and thin insulating film
- 专利标题（中）： 半导体器件，具有膨胀部分和薄绝缘膜的通孔
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申请号： US12533492申请日： 2009-07-31
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公开(公告)号： US08237285B2公开(公告)日： 2012-08-07
- 发明人: Kazumasa Tanida , Mie Matsuo , Masahiro Sekiguchi , Chiaki Takubo
- 申请人： Kazumasa Tanida , Mie Matsuo , Masahiro Sekiguchi , Chiaki Takubo
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Turocy & Watson, LLP
- 优先权： JP2008-197206 20080731
- 主分类号： H01L21/70
- IPC分类号： H01L21/70 ; H01L29/40 ; H01L23/48 ; H01L23/52
摘要：
Semiconductor device includes semiconductor substrate, through hole having first opening and second opening, and including an expansion portion so that an opening area of first opening is greater than an opening area of lowermost portion of expansion portion, first insulating layer, and having an opening which communicates with through hole and has an area smaller than opening area of first opening, first wiring layer provided on first insulating layer, second insulating layer provided on expansion portion of through hole, and to cover first opening and an inner wall surface of through hole, second insulating layer having an opening communicating with opening of first insulating layer so as to expose first wiring layer through opening of first insulating layer, and second wiring layer provided on second insulating layer to extend from inside of through hole, and being connected to first wiring layer via openings of first and second insulating layers.