Invention Grant
- Patent Title: Electron emission apparatus and method for making the same
- Patent Title (中): 电子发射装置及其制造方法
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Application No.: US12313938Application Date: 2008-11-26
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Publication No.: US08237344B2Publication Date: 2012-08-07
- Inventor: Yang Wei , Liang Liu , Shou-Shan Fan
- Applicant: Yang Wei , Liang Liu , Shou-Shan Fan
- Applicant Address: CN Beijing TW Tu-Cheng, New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW Tu-Cheng, New Taipei
- Agency: Altis Law Group, Inc.
- Priority: CN200810066047 20080201
- Main IPC: H01J1/62
- IPC: H01J1/62 ; H01J63/04

Abstract:
An electron emission apparatus includes an insulating substrate, one or more grids located on the substrate, wherein the one or more grids includes: a first, second, third and fourth electrode that are located on the periphery of the gird, wherein the first and the second electrode are parallel to each other, and the third and fourth electrodes are parallel to each other; and one or more electron emission units located on the substrate. Each the electron unit includes at least one electron emitter, and the electron emitter includes a first end, a second end and a gap. At least one electron emission end is located in the gap.
Public/Granted literature
- US20090195140A1 Electron emission apparatus and method for making the same Public/Granted day:2009-08-06
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