发明授权
US08238162B2 System and method for detecting disturbed memory cells of a semiconductor memory device
有权
用于检测半导体存储器件的干扰存储单元的系统和方法
- 专利标题： System and method for detecting disturbed memory cells of a semiconductor memory device
- 专利标题（中）： 用于检测半导体存储器件的干扰存储单元的系统和方法
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申请号： US12868228申请日： 2010-08-25
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公开(公告)号： US08238162B2公开(公告)日： 2012-08-07
- 发明人: Chun-Hsiung Hung , Jeng-Kuan Lin , Kuen-Long Chang
- 申请人： Chun-Hsiung Hung , Jeng-Kuan Lin , Kuen-Long Chang
- 申请人地址： TW
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 当前专利权人地址： TW
- 代理机构： Baker & McKenzie LLP
- 主分类号： G11C11/34
- IPC分类号： G11C11/34 ; G11C16/04 ; G11C16/06 ; G11C5/06
摘要：
A method of detecting a disturb condition of a memory cell includes application of multiple sets of conditions to the memory cell and determining whether the memory cell behaves as a programmed memory cell in response to the sets of conditions. A disturbed memory cell can be detected if the memory cell responds as a programmed memory cell in response to one of the sets of conditions, but responds as an erased memory cell in response to another of the sets of conditions.
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