发明授权
- 专利标题： High throughput recrystallization of semiconducting materials
- 专利标题（中）： 半导体材料的高通量再结晶
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申请号： US12632837申请日： 2009-12-08
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公开(公告)号： US08242033B2公开(公告)日： 2012-08-14
- 发明人: Glen Bennett Cook , Prantik Mazumder , Balram Suman , Natesan Venkataraman
- 申请人： Glen Bennett Cook , Prantik Mazumder , Balram Suman , Natesan Venkataraman
- 申请人地址： US NY Corning
- 专利权人： Corning Incorporated
- 当前专利权人： Corning Incorporated
- 当前专利权人地址： US NY Corning
- 代理商 Michael W. Russell
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
Methods for making and/or treating articles of semiconducting material are disclosed. In various methods, a first article of semiconducting material is provided, the first article of semiconducting material is heated sufficiently to melt the semiconducting material, and the melted semiconducting material is solidified in a direction substantially parallel to a shortest dimension of the melted article of semiconducting material. Articles of semiconducting materials made by methods described herein are also disclosed.
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